Datasheet PI3WVR626 (Diodes) - 6

FabricanteDiodes
Descripción2:1 MIPI 2-Data Lane
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PI3WVR626. DC and Transient Characteristics Cont. TA = -40oC to +85oC. Symbol. Description. Test Conditions

PI3WVR626 DC and Transient Characteristics Cont TA = -40oC to +85oC Symbol Description Test Conditions

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A product Line of Diodes Incorporated
PI3WVR626 DC and Transient Characteristics Cont. TA = -40oC to +85oC Symbol Description Test Conditions VCC (V) Min. Typ. Max. Units
I Power-Off Leakage Current (All I/O OFF Ports) VSW = 0.0 or 1.3V 0 -5 5.0 μA IOZ Off-State Leakage VSW = 0.0 ≤ DATA ≤ 1.3V, OE = High 3.6 -5 5.0 μA I 1.5 ON = -8mA, OE = 0V, RON_MIPI_HS Switch On Resistance for HS MIPI SEL = VCC or 0V, CLKA, 2.5 5 Ω CLKB, DB- or DA- = 0.2V 3.3 I 1.5 ON = -8mA, OE = 0V, RON_MIPI_LP Switch On Resistance for LP MIPI SEL = VCC or 0V, CLKA, 2.5 5 Ω CLKB, DB- or DA- = 1.2V 3.3 I 1.5 ON = -8mA, OE = 0V, ∆R On Resistance Matching Between ON_MIPI_HS HS MIPI Channels(1) SEL = VCC or 0V, CLKA, 2.5 0.2 Ω CLKB, DB- or DA- = 0.2V 3.3 I 1.5 ON = -8mA, OE = 0V, ∆R On Resistance Matching Between ON_MIPI_LP LP MIPI Channels(1) SEL = VCC or 0V, CLKA, 2.5 0.2 Ω CLKB, DB- or DA- = 1.2V 3.3 ION = -8mA, OE = 0V, 1.5 RON_FLAT_ On Resistance Flatness for HS MIPI SEL = VCC or 0V, CLKA, 2.5 0.1 Ω MIPI_HS CLKB, DB- or DA- = 0 to 0.5V 3.3 ION = -8mA, OE = 0V, 1.5 RON_FLAT_ On Resistance Flatness for LP MIPI SEL = VCC or 0V, CLKA, 2.5 0.1 Ω MIPI_LP CLKB, DB- or DA- = 0 to 1.3V 3.3 ICC Quiescent Supply Current VSEL = 0 or VCC, IOUT = 0, OE = 0V 3.6 11 20 μA I Quiescent Supply Current (High VSEL = 0 or VCC, IOUT = 0, CCZ Impedance) OE = 0V 3.6 1 μA I Increase in ICC Current Per Control VSEL = 0 or VCC, OE = CCT Voltage and VCC 1.5V 3.6 1 μA PI3WVR626 Document Number DS42006 Rev 3-2 6 www.diodes.com March 2020 Diodes Incorporated