Datasheet TPD4162F (Toshiba) - 9

FabricanteToshiba
DescripciónHigh Voltage Monolithic Silicon Power IC
Páginas / Página15 / 9 — TPD4162F. 9. Operating Ranges. Table 9.1 Operating Ranges(Ta=25. …
Formato / tamaño de archivoPDF / 763 Kb
Idioma del documentoInglés

TPD4162F. 9. Operating Ranges. Table 9.1 Operating Ranges(Ta=25. Characteristics. Symbol. Test Condition. Min. Typ. Max. Unit

TPD4162F 9 Operating Ranges Table 9.1 Operating Ranges(Ta=25 Characteristics Symbol Test Condition Min Typ Max Unit

Línea de modelo para esta hoja de datos

Versión de texto del documento

TPD4162F 9. Operating Ranges Table 9.1 Operating Ranges(Ta=25

) Characteristics Symbol Test Condition Min Typ. Max Unit
VBB  50 280 450 Operating power supply voltage V VCC  13.5 15 17.5
10. Electrical Characteristics Table 10.1 Electrical Characteristics(Ta=25

) Characteristics Symbol Test Condition Min Typ. Max Unit
IBB VBB = 450 V, Duty cycle = 0 %   0.5 mA ICC VCC = 15 V, Duty cycle = 0 %  0.9 1.5 Current dissipation IBS (ON) VBS = 15 V, high side ON  85 150 µA IBS (OFF) VBS = 15 V, high side OFF  75 130 Hall amp input sensitivity VHSENS(HA) ― 50 ― ― mVp-p Hall amp input current IHB(HA) ― -2 0 2 µA Hall amp common input voltage CMVIN(HA) ― 0.7  VREG-1.3 V Hall amp hysteresis width ∆VIN(HA) ― 8 30 62 Hall amp input voltage L→H VLH(HA) ― 4 15 31 mV Hall amp input voltage H→L VHL(HA) ― -31 -15 -4 Output saturation voltage VCEsat VCC = 15 V, Ioutp = 0.5 A  2.0 3.0 V FRD forward voltage VF IF = 0.5 A  1.5 3.0 V PWMMIN ― 0   PWM ON-duty cycle % PWMMAX ―   100 PWM ON-duty cycle, 0 % VVS0 % PWM = 0 % 1.7 2.1 2.5 V PWM ON-duty cycle, 100 % VVS100 % PWM = 100 % 4.9 5.4 6.1 V PWM ON-duty voltage range VVSW VVS100 % − VVS0 % 2.8 3.3 3.8 V Output all-OFF voltage VVSOFF Output all OFF 1.1 1.3 1.5 V Regulator voltage VREG VCC = 15 V, IREG = 30 mA 4.5 5.0 5.5 V Speed control voltage range VS ― 0  6.5 V FG output saturation voltage VFGsat VCC = 15 V, IFG = 5 mA   0.5 V Current limit voltage VR ― 0.46 0.5 0.54 V Current limit delay time DtR   3 4.5 µs Over-current protection voltage VCS  0.64 0.7 0.76 V Over-current protection delay time tCS C  2.2 3.5 µs 4=470 pF , R2=2 MΩ Over-current protection recovery time tcsr  1.0 2.0 ms Thermal shutdown temperature TSD 135  185 °C Thermal shutdown hysteresis ∆TSD ―  50  °C VCC under-voltage protection VCCUVD ― 10 11 12 V VCC under-voltage protection V recovery CCUVR ― 10.5 11.5 12.5 V © 2 020 9 2020-02-20 Toshiba Electronic Devices & Storage Corporation