Datasheet AP61100, AP61102 (Diodes) - 6
| Fabricante | Diodes |
| Descripción | 2.3V To 5.5V Input, 1A Low Iq Synchronous Buck Converter |
| Páginas / Página | 22 / 6 — AP61100/AP61102. Electrical Characteristics. Symbol. Parameter. … |
| Formato / tamaño de archivo | PDF / 1.6 Mb |
| Idioma del documento | Inglés |
AP61100/AP61102. Electrical Characteristics. Symbol. Parameter. Conditions. Min. Typ. Max. Unit. www.diodes.com
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AP61100/AP61102 Electrical Characteristics
(@ TJ = +25°C, VIN = 5V, unless otherwise specified. Min/Max limits apply across the recommended operating junction temperature range, -40°C to +125°C, and input voltage range, 2.3V to 5.5V, unless otherwise specified.)
Symbol Parameter Conditions Min Typ Max Unit
ISHDN Shutdown Supply Current VEN = 0V — 0.1 — μA PFM, VFB = 0.65V — 15 — μA IQ Quiescent Supply Current PWM, VFB = 0.65V — 620 — μA POR VIN Power-on Reset Rising Threshold — — 2.00 2.25 V UVLO VIN Undervoltage Lockout Falling Threshold — — 1.84 — V OVPVIN VIN Overvoltage Rising Threshold — — 6.3 — V OVPVIN_HYS VIN Overvoltage Hysteresis — — 300 — mV RDS(ON)1 High-Side Power MOSFET On-Resistance (Note 8) — — 110 — mΩ RDS(ON)2 Low-Side Power MOSFET On-Resistance (Note 8) — — 80 — mΩ IPEAK_LIMIT HS Peak Current Limit (Note 8) From Source to Drain 1.7 2.5 — A IVALLEY_LIMIT LS Valley Current Limit (Note 8) From Source to Drain — 1.9 — A fSW Oscillator Frequency VOUT = 1.8V, CCM 1.7 2.2 2.7 MHz tON_MIN Minimum On-Time — — 70 — ns tOFF_MIN Minimum Off-Time — — 70 — ns VFB Feedback Voltage CCM 0.588 0.600 0.612 V VEN_H EN Logic High Threshold — — 0.91 — V VEN_L EN Logic Low Threshold — — 0.83 — V tSS Soft-Start Time — — 0.5 — ms AP61102, PGUV_FALL Undervoltage Falling Threshold Percent of Output Regulation, — 90 — % Fault AP61102, PGUV_RISE Undervoltage Rising Threshold Percent of Output Regulation, — 95 — % Good AP61102, PGOV_RISE Overvoltage Rising Threshold Percent of Output Regulation, — 110 — % Fault AP61102, PGOV_FALL Overvoltage Falling Threshold Percent of Output Regulation, — 105 — % Good tPG_RD Power-Good Rise Delay Time AP61102 — 55 — μs AP61102, VPG_OL Power-Good Output Logic Low — — 0.4 V IPG = -1mA RPG Power-Good Pull-Up Resistor AP61102 — 5 — MΩ TSD Thermal Shutdown (Note 8) — — +160 — °C THys Thermal Shutdown Hysteresis (Note 8) — — +30 — °C Note: 8. Compliance to the datasheet limits is assured by one or more methods: production test, characterization, and/or design. AP61100/AP61102 6 of 22 June 2020 Document number: DS42004 Rev. 4 - 2
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© Diodes Incorporated
(@ TJ = +25°C, VIN = 5V, unless otherwise specified. Min/Max limits apply across the recommended operating junction temperature range, -40°C to +125°C, and input voltage range, 2.3V to 5.5V, unless otherwise specified.)
Symbol Parameter Conditions Min Typ Max Unit
ISHDN Shutdown Supply Current VEN = 0V — 0.1 — μA PFM, VFB = 0.65V — 15 — μA IQ Quiescent Supply Current PWM, VFB = 0.65V — 620 — μA POR VIN Power-on Reset Rising Threshold — — 2.00 2.25 V UVLO VIN Undervoltage Lockout Falling Threshold — — 1.84 — V OVPVIN VIN Overvoltage Rising Threshold — — 6.3 — V OVPVIN_HYS VIN Overvoltage Hysteresis — — 300 — mV RDS(ON)1 High-Side Power MOSFET On-Resistance (Note 8) — — 110 — mΩ RDS(ON)2 Low-Side Power MOSFET On-Resistance (Note 8) — — 80 — mΩ IPEAK_LIMIT HS Peak Current Limit (Note 8) From Source to Drain 1.7 2.5 — A IVALLEY_LIMIT LS Valley Current Limit (Note 8) From Source to Drain — 1.9 — A fSW Oscillator Frequency VOUT = 1.8V, CCM 1.7 2.2 2.7 MHz tON_MIN Minimum On-Time — — 70 — ns tOFF_MIN Minimum Off-Time — — 70 — ns VFB Feedback Voltage CCM 0.588 0.600 0.612 V VEN_H EN Logic High Threshold — — 0.91 — V VEN_L EN Logic Low Threshold — — 0.83 — V tSS Soft-Start Time — — 0.5 — ms AP61102, PGUV_FALL Undervoltage Falling Threshold Percent of Output Regulation, — 90 — % Fault AP61102, PGUV_RISE Undervoltage Rising Threshold Percent of Output Regulation, — 95 — % Good AP61102, PGOV_RISE Overvoltage Rising Threshold Percent of Output Regulation, — 110 — % Fault AP61102, PGOV_FALL Overvoltage Falling Threshold Percent of Output Regulation, — 105 — % Good tPG_RD Power-Good Rise Delay Time AP61102 — 55 — μs AP61102, VPG_OL Power-Good Output Logic Low — — 0.4 V IPG = -1mA RPG Power-Good Pull-Up Resistor AP61102 — 5 — MΩ TSD Thermal Shutdown (Note 8) — — +160 — °C THys Thermal Shutdown Hysteresis (Note 8) — — +30 — °C Note: 8. Compliance to the datasheet limits is assured by one or more methods: production test, characterization, and/or design. AP61100/AP61102 6 of 22 June 2020 Document number: DS42004 Rev. 4 - 2
www.diodes.com
© Diodes Incorporated