Datasheet BLF978P (Ampleon)
| Fabricante | Ampleon |
| Descripción | HF / VHF power LDMOS transistor |
| Páginas / Página | 15 / 1 — BLF978P HF / VHF power LDMOS transistor. Rev. 1 — 3 April 2020. Product … |
| Formato / tamaño de archivo | PDF / 1.5 Mb |
| Idioma del documento | Inglés |
BLF978P HF / VHF power LDMOS transistor. Rev. 1 — 3 April 2020. Product data sheet. 1. Product. profile. 1.1 General description
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BLF978P HF / VHF power LDMOS transistor Rev. 1 — 3 April 2020 Product data sheet 1. Product profile 1.1 General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
Table 1. Application information Test signal f V
DS PL Gp D (MHz) (V) (W) (dB) (%)
CW pulsed [1] 225 50 1200 25.5 80.0 CW pulsed [2] 352 50 1150 25.0 79.6 CW [2] 352 50 1150 23.6 76.7 CW [3] 500 45 800 22.3 71.6 CW [4] 650 50 1000 20.0 66.2 [1] On production test circuit tp = 100 s; = 10 %. [2] AR191160. [3] AR191195. [4] AR201049.
1.2 Features and benefits
Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (10 MHz to 700 MHz) For RoHS compliance see the product details on the Ampleon website
1.3 Applications
Industrial, scientific and medical applications Broadcast transmitter applications Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 8. Test information 8.1 Ruggedness in class-AB operation 8.2 Impedance information 8.3 Test circuit 8.4 Graphical data 8.4.1 1-Tone CW pulsed 9. Package outline 10. Handling information 11. Abbreviations 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
BLF978P HF / VHF power LDMOS transistor Rev. 1 — 3 April 2020 Product data sheet 1. Product profile 1.1 General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
Table 1. Application information Test signal f V
DS PL Gp D (MHz) (V) (W) (dB) (%)
CW pulsed [1] 225 50 1200 25.5 80.0 CW pulsed [2] 352 50 1150 25.0 79.6 CW [2] 352 50 1150 23.6 76.7 CW [3] 500 45 800 22.3 71.6 CW [4] 650 50 1000 20.0 66.2 [1] On production test circuit tp = 100 s; = 10 %. [2] AR191160. [3] AR191195. [4] AR201049.
1.2 Features and benefits
Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (10 MHz to 700 MHz) For RoHS compliance see the product details on the Ampleon website
1.3 Applications
Industrial, scientific and medical applications Broadcast transmitter applications Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 8. Test information 8.1 Ruggedness in class-AB operation 8.2 Impedance information 8.3 Test circuit 8.4 Graphical data 8.4.1 1-Tone CW pulsed 9. Package outline 10. Handling information 11. Abbreviations 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents