Datasheet SiRA99DP (Vishay) - 6
| Fabricante | Vishay |
| Descripción | P-Channel 30 V (D-S) MOSFET |
| Páginas / Página | 9 / 6 — SiRA99DP. TYPICAL CHARACTERISTICS. Notes. Normalized Thermal Transient … |
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| Idioma del documento | Inglés |
SiRA99DP. TYPICAL CHARACTERISTICS. Notes. Normalized Thermal Transient Impedance, Junction-to-Ambient
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SiRA99DP
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title 1 10000 Duty cycle = 0.5 ent ransi 0.2
Notes
1000 T e v P pedance DM ne ne 0.1 0.1 m ffecti l I t 1st li a 1 2nd li 0.05 t ed E 2 erm t 100 iz h 1 al 1. Duty cycle, D = T t2 0.02 2. Per unit base = R = 54 °C/W thJA Norm 3. T - T = P Z (t) JM A DM thJA Single pulse 4. Surface mounted 0.01 10 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title 1 10000 Duty cycle = 0.5 ent 0.2 ransi 0.1 1000 T e 0.05 v 0.02 pedance ne ne 0.1 m ffecti l I 1st li a 2nd li Single pulse ed E z erm 100 h ali T Norm 0.01 10 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71023. S19-0115-Rev. A, 04-Feb-2019
6
Document Number: 71023 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title 1 10000 Duty cycle = 0.5 ent ransi 0.2
Notes
1000 T e v P pedance DM ne ne 0.1 0.1 m ffecti l I t 1st li a 1 2nd li 0.05 t ed E 2 erm t 100 iz h 1 al 1. Duty cycle, D = T t2 0.02 2. Per unit base = R = 54 °C/W thJA Norm 3. T - T = P Z (t) JM A DM thJA Single pulse 4. Surface mounted 0.01 10 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title 1 10000 Duty cycle = 0.5 ent 0.2 ransi 0.1 1000 T e 0.05 v 0.02 pedance ne ne 0.1 m ffecti l I 1st li a 2nd li Single pulse ed E z erm 100 h ali T Norm 0.01 10 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71023. S19-0115-Rev. A, 04-Feb-2019
6
Document Number: 71023 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000