Datasheet IR53HD420, IR53H420 (Infineon) - 4
| Fabricante | Infineon |
| Descripción | Self-Oscillating Half Bridge |
| Páginas / Página | 8 / 4 — IR53H(D)420. Recommended Operating Conditions. Symbol Definition. … |
| Formato / tamaño de archivo | PDF / 72 Kb |
| Idioma del documento | Inglés |
IR53H(D)420. Recommended Operating Conditions. Symbol Definition. Minimum. Maximum. Units. NOTE 2:. NOTE 3:. Electrical Characteristics
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IR53H(D)420 Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation, the device should be used within the recommended conditions.
Symbol Definition Minimum Maximum Units
VB High side floating supply absolute voltage Vo + 10 Vo + Vclamp V V IN High voltage supply — 500 VO Half-bridge output voltage -3.0 (note 3) 500 ID Continuous drain current (TA = 25°C) — 0.7 -P2 — 0.85 (TA = 85°C) — 0.5 A -P2 — 0.6 (TC = 25°C) -P2 — 1.2 ICC Supply current (note 3) 5 mA TA Ambient temperature -40 125 °C
NOTE 2:
Care should be taken to avoid switching conditions where the VS node flies inductively below ground by more than 5V.
NOTE 3:
Enough current should be supplied to the VCC lead of the IC to keep the internal 15.6V zener diode clamping the voltage at this lead.
Electrical Characteristics
VBIAS (VCC, VBS) = 12V, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM.
MOSFET Characteristics Symbol Definition Min. Typ. Max. Units Test Conditions
trr Reverse recovery time (MOSFET body diode) — 240 — Qrr Reverse recovery charge (MOSFET body diode) — 0.5 — µC di/dt = 100 I R F=700mA ds(on) Static drain-to-source on resistance — 3.0 — Ω A/µs VSD Diode forward voltage — 0.8 — V
Dynamic Characteristics Symbol Definition Min. Typ. Max. Units Test Conditions
D RT duty cycle — 50 — % fosc = 20 kHz tsd Shutdown propagation delay — 660 — nsec 4 www.irf.com
The input/output logic timing diagram is shown in figure 1. For proper operation, the device should be used within the recommended conditions.
Symbol Definition Minimum Maximum Units
VB High side floating supply absolute voltage Vo + 10 Vo + Vclamp V V IN High voltage supply — 500 VO Half-bridge output voltage -3.0 (note 3) 500 ID Continuous drain current (TA = 25°C) — 0.7 -P2 — 0.85 (TA = 85°C) — 0.5 A -P2 — 0.6 (TC = 25°C) -P2 — 1.2 ICC Supply current (note 3) 5 mA TA Ambient temperature -40 125 °C
NOTE 2:
Care should be taken to avoid switching conditions where the VS node flies inductively below ground by more than 5V.
NOTE 3:
Enough current should be supplied to the VCC lead of the IC to keep the internal 15.6V zener diode clamping the voltage at this lead.
Electrical Characteristics
VBIAS (VCC, VBS) = 12V, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM.
MOSFET Characteristics Symbol Definition Min. Typ. Max. Units Test Conditions
trr Reverse recovery time (MOSFET body diode) — 240 — Qrr Reverse recovery charge (MOSFET body diode) — 0.5 — µC di/dt = 100 I R F=700mA ds(on) Static drain-to-source on resistance — 3.0 — Ω A/µs VSD Diode forward voltage — 0.8 — V
Dynamic Characteristics Symbol Definition Min. Typ. Max. Units Test Conditions
D RT duty cycle — 50 — % fosc = 20 kHz tsd Shutdown propagation delay — 660 — nsec 4 www.irf.com