Datasheet VEMD4110X01 (Vishay) - 3

FabricanteVishay
DescripciónSilicon PIN Photodiode
Páginas / Página7 / 3 — VEMD4110X01
Formato / tamaño de archivoPDF / 143 Kb
Idioma del documentoInglés

VEMD4110X01

VEMD4110X01

Línea de modelo para esta hoja de datos

Versión de texto del documento

VEMD4110X01
www.vishay.com Vishay Semiconductors Axis Title Axis Title 10 10000 100 10000 ) 90 ) V = 5 V, λ = 950 nm R (% (μA ity 80 tiv 70 1 1000 nsi rrent 1000 e u S 60 ine ne ne ine ne ne ght C 50 ectral 1st li 2nd l 2nd li p 1st li 2nd l 2nd li 40 0.1 100 100 everse Li 30 ative S R el - R 20 I ra - l.re 10 S 0.01 10 0 10 0.01 0.1 1 10 400 500 600 700 800 900 1000 1100 E - Irradiance (mW/cm2) e λ - Wavelength (nm) Fig. 3 - Reverse Light Current vs. Irradiance Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Axis Title Axis Tit 0° le 10° 20° 10 10000 10000 2 mW/cm2 λ = 950 nm 30° 1 mW/cm2 ) ent 0.5 mW/cm2 (μA 1 1000 itivity s 1000 40° 1.0 0.2 mW/cm2 ne ne ine Sen isplacem ne 0.9 tive 50° 0.1 mW/cm2 1st li ine 2nd li 2nd l 2nd li ght Current ela 0.8 0.1 100 R gular D 2nd l - 100 n 0.05 mW/cm2 60° l. A re - S φ everse Li 0.7 70° R - 80° I ra 0.01 10 10 0.01 0.1 1 0.6 0.4 0.2 0 V - Reverse Voltage (V) R 1st line Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 6 - Relative Sensitivity vs. Angular Displacement Rev. 1.1, 15-Jul-2020
3
Document Number: 84910 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000