Datasheet 2SJ168 (Toshiba)

DescripciónField Effect Transistor Silicon P Channel MOS
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2SJ168. Absolute Maximum Ratings (Ta. 25°C). Marking

Datasheet 2SJ168 Toshiba

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2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 mS (min) @ID = −50 mA • Low on resistance: RDS (ON) = 1.3 Ω (typ.) @ ID = −50 mA • Enhancement-mode • Complementary to 2SK1062
Absolute Maximum Ratings (Ta
Characteristics Symbol Rating Unit Drain-source voltage VDSS −60 V Gate-source voltage VGSS ±20 V DC ID −200 JEDEC ― Drain current mA Pulse IDP −800 JEITA SC-59 Drain power dissipation (Ta = 25°C) PD 200 mW TOSHIBA 2-3F1F Channel temperature Tch 150 °C Weight: 0.012 g (typ.) Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is the electrostatic sensitive device. Please handle with caution.
Start of commercial production 1988-06 1 2014-03-01 Document Outline TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Absolute Maximum Ratings (Ta  25°C) Marking Electrical Characteristics (Ta  25°C) RESTRICTIONS ON PRODUCT USE