Datasheet ZXM61N02F (Diodes) - 5
| Fabricante | Diodes |
| Descripción | N-Channel Enhancement Mode MOSFET |
| Páginas / Página | 7 / 5 — ZXM61N02F. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| Formato / tamaño de archivo | PDF / 217 Kb |
| Idioma del documento | Inglés |
ZXM61N02F. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics. Normalised RDS(on) and VGS(th)
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ZXM61N02F TYPICAL CHARACTERISTICS
100 100 +25°C VGS +150°C VGS ) A 6V 6V 10 4V 4V t (A 10 nt ( 3V 3.5V n re e 3V 2.5V rr 2.5V Cur 2V 1 1 Cu 2V in in ra ra 1.5V - D 100m - D 100m ID 1.5V ID 10m 10m 0.1 1 10 0.1 1 10 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V)
Output Characteristics Output Characteristics
) 10 1.6 VDS=10V (th RDS(on) S G A t ( 1.4 nd V VGS=4.5V 1 a 1.2 ID=0.93A rren u (on) C 1.0 T=150°C DS rain T=25°C R d VGS=VDS - D 0.1 e 0.8 ID=250µA ID alis 0.6 rm o VGS(th) 0.01 0.4 N 1.5 2.5 3.5 4.5 -100 0 100 200 VGS - Gate-Source Voltage (V) TJ- Junction Temperature (°C)
Transfer Characteristics Normalised RDS(on) and VGS(th) v Temperature
) Ω ( 10 ) e 100 c n t (A ta n 10 is s rre u Re C 1 n O 1 100m rain VGS=2.7V e c VGS=4.5V e D T=150°C rs 10m T=25°C e v in Sour e 1m ra - R - D 0.1 100µ 0.1 1 10 100 ISD 0.2 0.4 0.6 0.8 1.0 1.2 1.4 (on) ID - Drain Current (A) VSD - Source-Drain Voltage (V) S D
On-Resistance v Drain Current Source-Drain Diode Forward Voltage
R ISSUE 1 - JUNE 2004
5
100 100 +25°C VGS +150°C VGS ) A 6V 6V 10 4V 4V t (A 10 nt ( 3V 3.5V n re e 3V 2.5V rr 2.5V Cur 2V 1 1 Cu 2V in in ra ra 1.5V - D 100m - D 100m ID 1.5V ID 10m 10m 0.1 1 10 0.1 1 10 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V)
Output Characteristics Output Characteristics
) 10 1.6 VDS=10V (th RDS(on) S G A t ( 1.4 nd V VGS=4.5V 1 a 1.2 ID=0.93A rren u (on) C 1.0 T=150°C DS rain T=25°C R d VGS=VDS - D 0.1 e 0.8 ID=250µA ID alis 0.6 rm o VGS(th) 0.01 0.4 N 1.5 2.5 3.5 4.5 -100 0 100 200 VGS - Gate-Source Voltage (V) TJ- Junction Temperature (°C)
Transfer Characteristics Normalised RDS(on) and VGS(th) v Temperature
) Ω ( 10 ) e 100 c n t (A ta n 10 is s rre u Re C 1 n O 1 100m rain VGS=2.7V e c VGS=4.5V e D T=150°C rs 10m T=25°C e v in Sour e 1m ra - R - D 0.1 100µ 0.1 1 10 100 ISD 0.2 0.4 0.6 0.8 1.0 1.2 1.4 (on) ID - Drain Current (A) VSD - Source-Drain Voltage (V) S D
On-Resistance v Drain Current Source-Drain Diode Forward Voltage
R ISSUE 1 - JUNE 2004
5