Datasheet XN04601 (Panasonic) - 3

FabricantePanasonic
DescripciónSilicon NPN epitaxial planar type / Silicon PNP epitaxial planar type
Páginas / Página6 / 3 — XN04601. Characteristics. charts. of. Tr1. IC. . VCE. IC. . IB. IB. . …
Formato / tamaño de archivoPDF / 335 Kb
Idioma del documentoInglés

XN04601. Characteristics. charts. of. Tr1. IC. . VCE. IC. . IB. IB. . VBE. 60. 240. 1. 200. Ta. =. 25°C. V. V. CE. =. 10. V. CE. =. 10. V. I. T. B. =. 160. µA. Ta. =. 25°C. a. =. 25°C. 50. 200. 1. 000. ). 140. µA. )

XN04601 Characteristics charts of Tr1 IC  VCE IC  IB IB  VBE 60 240 1 200 Ta = 25°C V V CE = 10 V CE = 10 V I T B = 160 µA Ta = 25°C a = 25°C 50 200 1 000 ) 140 µA )

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XN04601 Characteristics charts of Tr1 IC  VCE IC  IB IB  VBE 60 240 1 200 Ta = 25°C V V CE = 10 V CE = 10 V I T B = 160 µA Ta = 25°C a = 25°C 50 200 1 000 ) 140 µA ) (mA (mA 40 120 µA 160 800 (µA C C B 100 µA 30 120 600 80 µA 20 60 µA 80 400 Base current I Collector current I 40 µA Collector current I 10 40 200 20 µA 0 0 0 0 2 4 6 8 10 0 200 400 600 800 1 000 0 0.2 0.4 0.6 0.8 1.0 Collector-emitter voltage V (V) Base current I (µA) Base-emitter voltage V (V) CE B BE IC  VBE VCE(sat)  IC hFE  IC 240 ) 102 600 I V C / IB = 10 V CE = 10 V (V CE = 10 V 200 500 CE(sat) FE ) 10 (mA 160 400 Ta = 75°C C 25°C 25°C 120 1 300 −25°C Ta = 75°C −25°C 80 200 25°C Collector current I 10−1 Ta = 75°C 40 Forward current transfer ratio h 100 −25°C Collector-emitter saturation voltage V 0 10−2 0 0 0.4 0.8 1.2 1.6 2.0 10−1 1 10 102 10−1 1 10 102 Base-emitter voltage V (V) Collector current I (mA) Collector current I (mA) Maintenance/ BE C C f Discontinued T  IE NV  IC 300 240 VCB = 10 V VCE = 10 V Ta = 25°C GV = 80 dB Function = FLAT ) 200 240 Ta = 25°C ) Maintenance/Discontinued includes following four Product lifecycle stage. (MHz (mV 160 T 180 Rg = 100 kΩ 120 (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) 120 80 22 kΩ Noise voltage NV 60 Transition frequency f 4.7 kΩ 40 0 0 −10−1 −1 −10 −102 10 102 103 Emitter current I (mA) Collector current I (µA) E C SJJ00083BED 3