Datasheet DPO2039DABQ-13 (Diodes) - 5 Fabricante Diodes Descripción 4-CH Over-Voltage Protection for CC/DIFF Pins on USB Type-C Páginas / Página 13 / 5 — DPO2039DABQ-13. Electrical Characteristics. Symbol. Parameter. Test … Formato / tamaño de archivo PDF / 1.0 Mb Idioma del documento Inglés
DPO2039DABQ-13. Electrical Characteristics. Symbol. Parameter. Test Conditions. Min. Typ. Max. Unit. Power Supply and Leakage Current
Descargar PDF
Línea de modelo para esta hoja de datos Versión de texto del documento DPO2039DABQ-13 Electrical Characteristics (@ TA = +25°C, VVSYS = 4.2V, unless otherwise specified) (continued) Symbol Parameter Test Conditions Min Typ Max Unit Power Supply and Leakage Current V V VSYS steps up from 2V until CC or UVLO VVSYS under Voltage Lockout 2.15 2.4 2.55 V DIFF FETs turn ON VVSYS steps down from 2.5V until CC or DIFF FETs turn off. Measure VUVLO_HSYS VVSYS UVLO Hysteresis — 200 — mV difference between rising and falling UVLO to calculate IVSYS_ON VVSYS Supply Current — — 190 — μAT Leakage current for CCxC when device isC ILEAK_CCxC V powered CCxC = 3.6V — — 30 μAU Leakage current for DIFFxC when device isD ILEAK_DIFFxC V powered DIFFxC = 3.6V — — 35 μAO Leakage current for CCxS when device is ILEAK_CCxS VCCx = 3.6V — — 30 μAR powered Leakage current for DIFFxS when device isP ILEAK_DIFFxS V powered DIFFx = 3.6V — — 35 μAW VVSYS = 0V, VCCxC = 22V, VCCxS = — — 150 μAE Leakage current into CCxC pins when 0V ILEAK_OVP_CCxCN device is in OVP VVSYS = 4.2V, VCCxC = 22V, VCCxS = — — 150 μA 0V VVSYS = 0V, VDIFFxC = 22V, VDIFFxS = — — 200 μA Leakage current into DIFFxC pins when 0V ILEAK_OVP_DIFFxC device is in OVP VVSYS = 4.2V, VDIFFxC = 22V, VDIFFxS — — 200 μA = 0V VVSYS = 0V, VCCxC = 22V, VCCxS = — — 1 μA Leakage current out of CCxS pins when 0V ILEAK_OVP_CCxS device is in OVP VVSYS = 4.2V, VCCxC = 22V, VCCxS = — — 1 μA 0V VVSYS = 0V, VDIFFxC = 22V, VDIFFxS = — — 1 μA Leakage current out of DIFFxS pins when 0V ILEAK_OVP_DIFFxS device is in OVP VVSYS = 4.2V, VDIFFxC = 22V, VDIFFxS — — 1 μA = 0VFAULTB Pin VFAULTB Active-Low Output Voltage of FAULTB Pin IOL = 8mA — — 0.4 V ILEAK_FAULB FAULTB Leakage Current VFAULTB = 4.2V — — 1 μA tFAULTB_ASSERTION FAULTB Assertion Time — — — 300 μs tFAULTB_DEASSERTION FAULTB Deassertion Time — — 4 — msTiming Requirements Time from Crossing Rising V t VSYS UVLO ON — — — 2.5 ms until CC/DIFF OVP FETs are on OVP Response Time on the CC Pins, Time tOVP_RESPONSE_CC — — 100 — ns from OVP Asserted until OVP FETs Turnoff OVP Response Time on the DIFF Pins, tOVP_RESPONSE_DIFF Time from OVP Asserted until OVP FETs — — 100 — ns Turnoff OVP Recovery Time on the CC Pins. Once an OVP has occurred, the minimum tOVP_RESPONSE_CC_1 — 26 32 38 ms duration until CC FETs turn back on if OVP has been removed already OVP Recovery Time on the DIFF Pins. Once an OVP has occurred, the minimum tOVP_RESPONSE_DIFF_1 — 26 32 38 ms duration until DIFF FETs turn back on if OVP has been removed already OVP Recovery Time on the CC Pins. Time tOVP_RESPONSE_CC_2 from OVP removal until CC FETs turn back — — 1 — ms on, if device has been in OVP > 40ms OVP Recovery Time on the DIFF Pins. Time from OVP removal until DIFF FETs tOVP_RESPONSE_DIFF_2 — — 1 — ms turn back on, if device has been in OVP > 40msThermal Shutdown and Hysteresis TSHDN Thermal Shut Down Threshold — — +150 — °C THSYS Thermal Shut Down Hysteresis — — +20 — °C Note: 6. Guaranteed by bench characterization DPO2039DABQ-13 5 of 13 December 2019 Document number: DS41005 Rev. 1 - 2www.diodes.com © Diodes Incorporated