Datasheet 2SA1381, KSA1381 (Fairchild) - 3

FabricanteFairchild
DescripciónPNP Epitaxial Silicon Transistor
Páginas / Página6 / 3 — 2SA1381/KSA1381 — PNP Ep. Typical Characteristics. -20. -10. -16. -12. it …
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2SA1381/KSA1381 — PNP Ep. Typical Characteristics. -20. -10. -16. -12. it axial Silico. -40. -60. -80. -100. Figure 1. Static Characteristic

2SA1381/KSA1381 — PNP Ep Typical Characteristics -20 -10 -16 -12 it axial Silico -40 -60 -80 -100 Figure 1 Static Characteristic

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2SA1381/KSA1381 — PNP Ep Typical Characteristics -20 -10
I = -140µA B I = -120µA I = -60µA B B T I = -50µA
-16
B EN
-8
I = -100µA B RR I = -40µA I = -80µA B
-12
B CU CURRENT R
-6
I = -30µA I = -60µA B CTO B CTOR
-8
E LLE L
-4
L O I = -40µA I = -20µA B B ], CO [A], C
-4
I = -20µA [A I C I = -10µA B B I C
-2 it axial Silico
I = 0µA B
-0
I = 0µA B
-0 -2 -4 -6 -8 -10 -0 -0 -20 -40 -60 -80 -100
V [V], COLLECTOR-EMITTER VOLTAGE CE V [V], COLLECTOR-EMITTER VOLTAGE CE
Figure 1. Static Characteristic Figure 2. Static Characteristic n T ransistor 1k
E
-10
G A I = 10 I VCE = -10V C B T L O V N IN O A TI
-1
V (sat) BE G A T R TU
100
A RREN ], S V CU t)[
-0.1
V (sat) CE (sa , DC CE h FE t), V a (s BE V
10 -0.1 -1 -10 -100 -0.01 -0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT I [mA], COLLECTOR CURRENT C
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 -160
DUCT O VCE = -30V R VCE = -10V P
-140
T
-120
EN
100
NDWIDTH
-100
CURR BA R O IN
-80
T A C E L
-60
L
10 -40
], CO A [m ), CURRENT G
-20
I C Hz (M
1 -0
f T
-0.1 -1 -10 -100 -1000 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
I V C[mA], COLLECTOR CURRENT BE[V], BASE-EMITTER VOLTAGE
Figure 5. Current Gain Bandwidth Product Figure 6. Base-Emitter On Voltage
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1381/KSA1381 Rev. A1 3