Datasheet NTBG015N065SC1 (ON Semiconductor)
| Fabricante | ON Semiconductor |
| Descripción | MOSFET – SiC Power, Single N-Channel, D2PAK-7L 650 V, 12 mW, 145 A |
| Páginas / Página | 8 / 1 — Features. www.onsemi.com. (BR)DSS. RDS(ON) MAX. ID MAX. Typical … |
| Formato / tamaño de archivo | PDF / 243 Kb |
| Idioma del documento | Inglés |
Features. www.onsemi.com. (BR)DSS. RDS(ON) MAX. ID MAX. Typical Applications. MAXIMUM RATINGS. Parameter. Symbol. Value. Unit
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W
, 145 A NTBG015N065SC1
Features
• Typ. RDS(on) = 12 mW @ VGS = 18 V Typ. RDS(on) = 15 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC)
www.onsemi.com
• Low Effective Output Capacitance (Coss = 424 pF) • 100% Avalanche Tested • T
V
J = 175°C
(BR)DSS RDS(ON) MAX ID MAX
• RoHS Compliant 650 V 18 mW @ 18 V 145 A
Typical Applications
• SMPS (Switching Mode Power Supplies) Drain (TAB) • Solar Inverters • UPS (Uninterruptable Power Supplies) • Energy Storages Gate (Pin 1)
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage V Driver Source (Pin 2) DSS 650 V Gate−to−Source Voltage VGS −8/+22 V Power Source (Pins 3, 4, 5, 6, 7) Recommended Operation Val- TC < 175°C VGSop −5/+18 V
N−CHANNEL MOSFET
ues of Gate − Source Voltage Continuous Drain Steady TC = 25°C ID 145 A Current RqJC (Note 2) State Power Dissipation PD 500 W RqJC (Note 2) Continuous Drain Steady TC = 100°C ID 103 A Current RqJA State (Notes 1, 2) Power Dissipation P
D2PAK−7L
D 250 W R
CASE 418BJ
qJA (Notes 1, 2) Pulsed Drain Current (Note 3) TC = 25°C IDM 422 A
MARKING DIAGRAM
Single Pulse Surge TA = 25°C, tp = 10 ms, IDSC 798 A Drain Current Capa- RG = 4.7 W bility BG015N Operating Junction and Storage Temperature T 065SC1 J, Tstg −55 to °C Range +175 AYWWZZ Source Current (Body Diode) IS 111 A Single Pulse Drain−to−Source Avalanche E BG015N065SC1 = Specific Device Code AS 84 mJ Energy (IL = 13 Apk, L = 1 mH) (Note 4) A = Assembly Location Y = Year Maximum Lead Temperature for Soldering, 1/8″ TL 245 °C WW = Work Week from Case for 10 Seconds ZZ = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
1. Surface mounted on a FR−4 board using1 in2 pad of 2 oz copper. See detailed ordering and shipping information on page 6 of 2. The entire application environment impacts the thermal resistance values shown, this data sheet. they are not constants and are only valid for the particular conditions noted. 3. Repetitive rating, limited by max junction temperature. 4. EAS of 84 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 13 A, VDD = 50 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
February, 2021 − Rev. 0 NTBG015N065SC1/D
W
, 145 A NTBG015N065SC1
Features
• Typ. RDS(on) = 12 mW @ VGS = 18 V Typ. RDS(on) = 15 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC)
www.onsemi.com
• Low Effective Output Capacitance (Coss = 424 pF) • 100% Avalanche Tested • T
V
J = 175°C
(BR)DSS RDS(ON) MAX ID MAX
• RoHS Compliant 650 V 18 mW @ 18 V 145 A
Typical Applications
• SMPS (Switching Mode Power Supplies) Drain (TAB) • Solar Inverters • UPS (Uninterruptable Power Supplies) • Energy Storages Gate (Pin 1)
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage V Driver Source (Pin 2) DSS 650 V Gate−to−Source Voltage VGS −8/+22 V Power Source (Pins 3, 4, 5, 6, 7) Recommended Operation Val- TC < 175°C VGSop −5/+18 V
N−CHANNEL MOSFET
ues of Gate − Source Voltage Continuous Drain Steady TC = 25°C ID 145 A Current RqJC (Note 2) State Power Dissipation PD 500 W RqJC (Note 2) Continuous Drain Steady TC = 100°C ID 103 A Current RqJA State (Notes 1, 2) Power Dissipation P
D2PAK−7L
D 250 W R
CASE 418BJ
qJA (Notes 1, 2) Pulsed Drain Current (Note 3) TC = 25°C IDM 422 A
MARKING DIAGRAM
Single Pulse Surge TA = 25°C, tp = 10 ms, IDSC 798 A Drain Current Capa- RG = 4.7 W bility BG015N Operating Junction and Storage Temperature T 065SC1 J, Tstg −55 to °C Range +175 AYWWZZ Source Current (Body Diode) IS 111 A Single Pulse Drain−to−Source Avalanche E BG015N065SC1 = Specific Device Code AS 84 mJ Energy (IL = 13 Apk, L = 1 mH) (Note 4) A = Assembly Location Y = Year Maximum Lead Temperature for Soldering, 1/8″ TL 245 °C WW = Work Week from Case for 10 Seconds ZZ = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
1. Surface mounted on a FR−4 board using1 in2 pad of 2 oz copper. See detailed ordering and shipping information on page 6 of 2. The entire application environment impacts the thermal resistance values shown, this data sheet. they are not constants and are only valid for the particular conditions noted. 3. Repetitive rating, limited by max junction temperature. 4. EAS of 84 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 13 A, VDD = 50 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
February, 2021 − Rev. 0 NTBG015N065SC1/D