Datasheet NVH4L015N065SC1 (ON Semiconductor)
| Fabricante | ON Semiconductor |
| Descripción | MOSFET -SiC Power, Single N-Channel, TO247-4L 650 V, 12 mW, 142 A |
| Páginas / Página | 8 / 1 — Features. www.onsemi.com. (BR)DSS. RDS(ON) MAX. ID MAX. Typical … |
| Revisión | 2 |
| Formato / tamaño de archivo | PDF / 372 Kb |
| Idioma del documento | Inglés |
Features. www.onsemi.com. (BR)DSS. RDS(ON) MAX. ID MAX. Typical Applications. MAXIMUM RATINGS. N−CHANNEL MOSFET. Parameter. Symbol. Value
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link to page 1 link to page 1 link to page 1 link to page 1 link to page 1 link to page 1 MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 m
W
, 142 A NVH4L015N065SC1
Features
• Typ. RDS(on) = 12 m @ VGS = 18 V
www.onsemi.com
Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • High Speed Switching with Low Capacitance (C
V
oss = 430 pF)
(BR)DSS RDS(ON) MAX ID MAX
• 100% Avalanche Tested 650 V 18 m @ 18 V 142 A • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant D
Typical Applications
• Automotive On Board Charger • Automotive DC/DC Converter for EV/HEV G • Automotive Traction Inverter S1: Driver Source S2: Power Source S1 S2
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
N−CHANNEL MOSFET Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 650 V Gate−to−Source Voltage VGS −8/+22 V Recommended Operation Values TC < 175°C VGSop −5/+18 V of Gate−to−Source Voltage Continuous Drain Steady TC = 25°C ID 142 A Current (Note 1) State DS2 Power Dissipation P S1 D 500 W G (Note 1)
TO247−4L
Continuous Drain Steady T
CASE 340CJ
C = 100°C ID 100 A Current (Note 1) State
MARKING DIAGRAM
Power Dissipation PD 250 W (Note 1) Pulsed Drain Current TC = 25°C IDM 483 A (Note 2) Single Pulse Surge T H4L015 A = 25°C, tp = 10 s, IDSC 798 A Drain Current Capability R 065SC1 G = 4.7 AYWWZZ Operating Junction and Storage Temperature TJ, Tstg −55 to °C Range +175 Source Current (Body Diode) IS 114 A Single Pulse Drain−to−Source Avalanche EAS 84 mJ H4L015065SC1 = Specific Device Code Energy (IL(pk) = 13 A, L = 1 mH) (Note 3) A = Assembly Location Maximum Lead Temperature for Soldering TL 300 °C Y = Year (1/8″ from case for 5 s) WW = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the ZZ = Lot Traceability device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
Device Package Shipping
2. Repetitive rating, limited by max junction temperature. 3. EAS of 84 mJ is based on starting T NVH4L015N065SC1 TO247−4L 30 Units / J = 25°C; L = 1 mH, IAS = 13 A, V Tube DD = 50 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
February, 2021 − Rev. 2 NVH4L015N065SC1/D
W
, 142 A NVH4L015N065SC1
Features
• Typ. RDS(on) = 12 m @ VGS = 18 V
www.onsemi.com
Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • High Speed Switching with Low Capacitance (C
V
oss = 430 pF)
(BR)DSS RDS(ON) MAX ID MAX
• 100% Avalanche Tested 650 V 18 m @ 18 V 142 A • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant D
Typical Applications
• Automotive On Board Charger • Automotive DC/DC Converter for EV/HEV G • Automotive Traction Inverter S1: Driver Source S2: Power Source S1 S2
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
N−CHANNEL MOSFET Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 650 V Gate−to−Source Voltage VGS −8/+22 V Recommended Operation Values TC < 175°C VGSop −5/+18 V of Gate−to−Source Voltage Continuous Drain Steady TC = 25°C ID 142 A Current (Note 1) State DS2 Power Dissipation P S1 D 500 W G (Note 1)
TO247−4L
Continuous Drain Steady T
CASE 340CJ
C = 100°C ID 100 A Current (Note 1) State
MARKING DIAGRAM
Power Dissipation PD 250 W (Note 1) Pulsed Drain Current TC = 25°C IDM 483 A (Note 2) Single Pulse Surge T H4L015 A = 25°C, tp = 10 s, IDSC 798 A Drain Current Capability R 065SC1 G = 4.7 AYWWZZ Operating Junction and Storage Temperature TJ, Tstg −55 to °C Range +175 Source Current (Body Diode) IS 114 A Single Pulse Drain−to−Source Avalanche EAS 84 mJ H4L015065SC1 = Specific Device Code Energy (IL(pk) = 13 A, L = 1 mH) (Note 3) A = Assembly Location Maximum Lead Temperature for Soldering TL 300 °C Y = Year (1/8″ from case for 5 s) WW = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the ZZ = Lot Traceability device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
Device Package Shipping
2. Repetitive rating, limited by max junction temperature. 3. EAS of 84 mJ is based on starting T NVH4L015N065SC1 TO247−4L 30 Units / J = 25°C; L = 1 mH, IAS = 13 A, V Tube DD = 50 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
February, 2021 − Rev. 2 NVH4L015N065SC1/D