Datasheet ADHV4702-1 (Analog Devices) - 10

FabricanteAnalog Devices
Descripción24 V to 220 V Precision Operational Amplifier
Páginas / Página21 / 10 — ADHV4702-1. Data Sheet. 150. 100. –40°C. TA = 0°C. A = +25°C. TA = +85°C. …
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ADHV4702-1. Data Sheet. 150. 100. –40°C. TA = 0°C. A = +25°C. TA = +85°C. A = 0°C. A = +85°C. –50. TA = –40°C. –100. –150. TIME (2µs/DIV). AV = 20

ADHV4702-1 Data Sheet 150 100 –40°C TA = 0°C A = +25°C TA = +85°C A = 0°C A = +85°C –50 TA = –40°C –100 –150 TIME (2µs/DIV) AV = 20

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ADHV4702-1 Data Sheet 150 150 100 100 50 –40°C 50 TA = 0°C ) ) T V V A = +25°C ( ( TA = +85°C T 0 T T A = 0°C 0 OU T OU V A = +25°C T V A = +85°C –50 –50 TA = –40°C –100 –100 –150
012
–150
013 7-
TIME (2µs/DIV)
047-
TIME (2µs/DIV)
16 1604 Figure 17. Large Signal Pulse Response at Various TA, Rising Edge, AV = 40, Figure 20. Large Signal Pulse Response at Various TA, Falling Edge, AV = 40, VS = ±110 V, VOUT = 200 V p-p, RF = 100 kΩ, RLOAD = 10 kΩ, RADJ = 0 Ω VS = ±110 V, VOUT = 200 V p-p, RF = 100 kΩ, RLOAD = 10 kΩ, RADJ = 0 Ω
150 150 AV = 20 AV = 20 AV = 40 AV = 40 100 100 50 50 ) (V ) V T ( 0 T 0 OUV OUV –50 –50 –100 –100
017
–150
016
–150 TIME (1µs/DIV)
47-
TIME (1µs/DIV)
16047- 160 Figure 18. Large Signal Pulse Response at Various Gains, Rising Edge, Figure 21. Large Signal Pulse Response at Various Gains, Falling Edge, TA = 25°C, VS = ±110 V, VOUT = 200 V p-p, RF = 100 kΩ, RLOAD = 10 kΩ, TA = 25°C, VS = ±110 V, VOUT = 200 V p-p, RF = 100 kΩ, RLOAD = 10 kΩ, RADJ = 0 Ω RADJ = 0 Ω
150 1 AV = 20 AV = 40 0 100 –1 –2 50 ) V ) –3 ( T dB U ( O 0 –4 V IN GA –5 –50 –6 –7 VOUT = 50V p-p –100 VOUT = 100V p-p –8 VOUT = 150V p-p V
5
OUT = 200V p-p –150
01
–9
2 47-
100 1k 10k 100k 1M
20
TIME (100µs/DIV)
7- 160
FREQUENCY (Hz)
1604 Figure 19. Large Signal Pulse Response at Various Gains, TA = 25°C, Figure 22. Large Signal Frequency Response at Various Output Swings with VS = ±110 V, VOUT = 200 V p-p, RF = 100 kΩ, RLOAD = 10 kΩ, RADJ = 0 Ω Input Clamping Diodes (See the Slew Boost Circuit and Protection Section), TA = 25°C, AV = 40, VS = ±110 V, RF = 100 kΩ, RLOAD = 10 kΩ, RADJ = 0 Ω Rev. B | Page 10 of 21 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION TYPICAL APPLICATION CIRCUIT TABLE OF CONTENTS REVISION HISTORY FUNCTIONAL BLOCK DIAGRAM SPECIFICATIONS ±12 V TO ±110 V SUPPLY ABSOLUTE MAXIMUM RATINGS MAXIMUM POWER DISSIPATION THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION INTERNAL ELECTROSTATIC DISCHARGE (ESD) PROTECTION SLEW BOOST CIRCUIT AND PROTECTION DIGITAL GROUND (DGND) RESISTOR ADJUSTABLE QUIESCENT CURRENT (RADJ) SHUTDOWN PIN (SDB) TEMPERATURE MONITOR (TMP) OVERTEMPERATURE PROTECTION OUTPUT CURRENT DRIVE AND SHORT-CIRCUIT PROTECTION EXTERNAL COMPENSATION AND CAPACITIVE LOAD (CLOAD) DRIVING SAFE OPERATING AREA LFCSP PACKAGE AND HIGH VOLTAGE PIN SPACING EXPOSED PAD (EPAD) APPLICATIONS INFORMATION POWER SUPPLY AND DECOUPLING HIGH VOLTAGE GUARD RING HIGH VOLTAGE DAC VOLTAGE SUBTRACTOR HIGH CURRENT OUTPUT DRIVER SIGNAL RANGE EXTENDER OUTLINE DIMENSIONS ORDERING GUIDE