Datasheet HMC789ST89E (Analog Devices) - 3

HMC789ST89E
v02.0314
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 -2.8 GHz Output IP3 vs. Temperature @ 900 MHz Output IP3 vs. Pout = 10 dBm Each Tone Output Power @ 900 MHz
50 50 T M 45 45 (dB) 40 (dB) 40 K - S IP3 IP3 C 35 +25 C +25 C 35 +85 C +85 C - 40 C LO - 40 C 30 30 0.7 0.8 0.9 1 1.1 0 2 4 6 8 10 12 14 16 18 IN B FREQUENCY (GHz) SINGLE TONE POUT (dBm) A
Reverse Isolation vs. Noise Figure vs. Temperature @ 900 MHz Temperature @ 900 MHz
R & G 8 0 E +25 C IV 6 +85 C +25 C - 40 C -10 +85 C ) R - 40 C ) (dB N (dB 4 IO F -20 T N LA O S - D IS 2 -30 R IE 0 -40 0.75 0.8 0.85 0.9 0.95 1 0.7 0.8 0.9 1 1.1 LIF FREQUENCY (GHz) FREQUENCY (GHz) P M A
Gain, Power & IP3 vs. Supply Voltage @ 900 MHz Power Compression @ 900 MHz
50 50 ) m (%) 3 (dB 40 Pout 40 IP Gain PAE PAE ), O Gain m 30 B (dB), P1dB (d 30 OIP3 GAIN 20 P1dB 20 (dB), (dBm), 10 Pout GAIN 10 0 4.5 5 5.5 -8 -4 0 4 8 12 SUPPLY VOLTAGE INPUT POWER (dBm) I F nf o or r p mati r o in cfe ur , d nish e e l d iv b e y r A y a nalo n g d t Devi o p ces i la s c bele o ieve rd d t e o rbs e : H acc iutrtatite e M and ic reli rao bl w e. a H v o e C wever o , nrp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No rd Phoe n r O e: 7 n- 81-li 3 n 2 e a 9-4 t w 70 ww 0 • O . rdh e itt r o it nle i . n co e a m
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