Datasheet HMC8401 (Analog Devices) - 5
| Fabricante | Analog Devices |
| Descripción | DC to 28 GHz, GaAs pHEMT MMIC Low Noise Amplifier |
| Páginas / Página | 17 / 5 — Data Sheet. HMC8401. ABSOLUTE MAXIMUM RATINGS Table 4. Parameter. Rating. … |
| Revisión | B |
| Formato / tamaño de archivo | PDF / 363 Kb |
| Idioma del documento | Inglés |
Data Sheet. HMC8401. ABSOLUTE MAXIMUM RATINGS Table 4. Parameter. Rating. ESD CAUTION
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Data Sheet HMC8401 ABSOLUTE MAXIMUM RATINGS Table 4.
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a Drain Bias Voltage (VDD) +10 V stress rating only; functional operation of the product at these Second Gate Bias Voltage (VGG2) −2.6 V to +3.6V or any other conditions above those indicated in the operational RF Input Power (RFIN) 20 dBm section of this specification is not implied. Operation beyond Channel Temperature 175°C the maximum operating conditions for extended periods may Continuous Power Dissipation (PDISS), 1.67W affect product reliability. TA = 85°C (Derate 18.3 mW/°C Above 85°C) Thermal Resistance, θJC (Channel to 54°C/W Die Bottom)
ESD CAUTION
Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +85°C ESD Sensitivity, Human Body Model (HBM) Class 1A, 250 V Rev. B | Page 5 of 17 Document Outline Features Applications General Description Functional Block Diagram Table of Contents Revision History Specifications 0.01 GHz to 3 GHz Frequency Range 3 GHz to 26 GHz Frequency Range 26 GHz to 28 GHz Frequency Range Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding Typical Application Circuit Assembly Diagram Outline Dimensions Ordering Guide
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a Drain Bias Voltage (VDD) +10 V stress rating only; functional operation of the product at these Second Gate Bias Voltage (VGG2) −2.6 V to +3.6V or any other conditions above those indicated in the operational RF Input Power (RFIN) 20 dBm section of this specification is not implied. Operation beyond Channel Temperature 175°C the maximum operating conditions for extended periods may Continuous Power Dissipation (PDISS), 1.67W affect product reliability. TA = 85°C (Derate 18.3 mW/°C Above 85°C) Thermal Resistance, θJC (Channel to 54°C/W Die Bottom)
ESD CAUTION
Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +85°C ESD Sensitivity, Human Body Model (HBM) Class 1A, 250 V Rev. B | Page 5 of 17 Document Outline Features Applications General Description Functional Block Diagram Table of Contents Revision History Specifications 0.01 GHz to 3 GHz Frequency Range 3 GHz to 26 GHz Frequency Range 26 GHz to 28 GHz Frequency Range Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding Typical Application Circuit Assembly Diagram Outline Dimensions Ordering Guide