Datasheet HMC1127 (Analog Devices) - 3
| Fabricante | Analog Devices |
| Descripción | GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz |
| Páginas / Página | 16 / 3 — Data Sheet. HMC1127. SPECIFICATIONS 2 GHz TO 8 GHz FREQUENCY RANGE. Table … |
| Revisión | B |
| Formato / tamaño de archivo | PDF / 391 Kb |
| Idioma del documento | Inglés |
Data Sheet. HMC1127. SPECIFICATIONS 2 GHz TO 8 GHz FREQUENCY RANGE. Table 1. Parameter. Symbol. Test Conditions/Comments. Min Typ
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Data Sheet HMC1127 SPECIFICATIONS 2 GHz TO 8 GHz FREQUENCY RANGE
TA = +25°C, VDD = +5 V, VGG2 = +1.4 V, IDD = 80 mA. Adjust VGG1 between −2 V and 0 V to achieve IDD = 80 mA typical.
Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 2 8 GHz GAIN 12 15 dB Gain Variation Over Temperature 0.005 dB/°C RETURN LOSS Input 17 dB Output 10 dB OUTPUT POWER Output Power for 1 dB Compression P1dB 11 14 dBm Saturated Output Power PSAT 18.5 dBm Output Third-Order Intercept IP3 Measurement taken at POUT/tone = 10 dBm 25.5 dBm NOISE FIGURE 8 dBm SUPPLY CURRENT IDD VDD = 4 V, VDD = 5 V, VDD = 6 V, VDD = 7 V, or VDD = 8 V 80 mA
8 GHz TO 30 GHz FREQUENCY RANGE
TA = +25°C, VDD = +5 V, VGG2 = +1.4 V, IDD = 80 mA. Adjust VGG1 between −2 V and 0 V to achieve IDD = 80 mA typical.
Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 8 30 GHz GAIN 10.5 13.5 dB Gain Variation Over Temperature 0.006 dB/°C RETURN LOSS Input 18 dB Output 20 dB OUTPUT POWER 1 dB Compression (P1dB) P1dB 9.5 12.5 dBm Saturated Output Power (PSAT) PSAT 17.5 dBm Output Third-Order Intercept IP3 Measurement taken at POUT/tone = 10 dBm 23 dBm NOISE FIGURE 6.5 dBm SUPPLY CURRENT IDD VDD = 4 V, VDD = 5 V, VDD = 6 V, VDD = 7 V, or VDD = 8 V 80 mA Rev. B | Page 3 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY 2 GHz TO 8 GHz FREQUENCY RANGE 8 GHz TO 30 GHz FREQUENCY RANGE 30 GHz TO 40 GHz FREQUENCY RANGE 40 GHz TO 50 GHz FREQUENCY RANGE ESD CAUTION INTERFACE SCHEMATICS MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS Handling Precautions Mounting Wire Bonding ASSEMBLY DIAGRAM ORDERING GUIDE
TA = +25°C, VDD = +5 V, VGG2 = +1.4 V, IDD = 80 mA. Adjust VGG1 between −2 V and 0 V to achieve IDD = 80 mA typical.
Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 2 8 GHz GAIN 12 15 dB Gain Variation Over Temperature 0.005 dB/°C RETURN LOSS Input 17 dB Output 10 dB OUTPUT POWER Output Power for 1 dB Compression P1dB 11 14 dBm Saturated Output Power PSAT 18.5 dBm Output Third-Order Intercept IP3 Measurement taken at POUT/tone = 10 dBm 25.5 dBm NOISE FIGURE 8 dBm SUPPLY CURRENT IDD VDD = 4 V, VDD = 5 V, VDD = 6 V, VDD = 7 V, or VDD = 8 V 80 mA
8 GHz TO 30 GHz FREQUENCY RANGE
TA = +25°C, VDD = +5 V, VGG2 = +1.4 V, IDD = 80 mA. Adjust VGG1 between −2 V and 0 V to achieve IDD = 80 mA typical.
Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 8 30 GHz GAIN 10.5 13.5 dB Gain Variation Over Temperature 0.006 dB/°C RETURN LOSS Input 18 dB Output 20 dB OUTPUT POWER 1 dB Compression (P1dB) P1dB 9.5 12.5 dBm Saturated Output Power (PSAT) PSAT 17.5 dBm Output Third-Order Intercept IP3 Measurement taken at POUT/tone = 10 dBm 23 dBm NOISE FIGURE 6.5 dBm SUPPLY CURRENT IDD VDD = 4 V, VDD = 5 V, VDD = 6 V, VDD = 7 V, or VDD = 8 V 80 mA Rev. B | Page 3 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY 2 GHz TO 8 GHz FREQUENCY RANGE 8 GHz TO 30 GHz FREQUENCY RANGE 30 GHz TO 40 GHz FREQUENCY RANGE 40 GHz TO 50 GHz FREQUENCY RANGE ESD CAUTION INTERFACE SCHEMATICS MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS Handling Precautions Mounting Wire Bonding ASSEMBLY DIAGRAM ORDERING GUIDE