Datasheet HMC-ALH311 (Analog Devices)
| Fabricante | Analog Devices |
| Descripción | GaAs HEMT MMIC LOW NOISE DRIVER AMPLIFIER, 22.0 - 26.5 GHz |
| Páginas / Página | 6 / 1 — HMC-ALH311. GaAs HEMT MMIC LOW NOISE. DRIVER AMPLIFIER, 22.0 - 26.5 GHz. … |
| Formato / tamaño de archivo | PDF / 274 Kb |
| Idioma del documento | Inglés |
HMC-ALH311. GaAs HEMT MMIC LOW NOISE. DRIVER AMPLIFIER, 22.0 - 26.5 GHz. Typical Applications. Features. Functional Diagram
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HMC-ALH311
v02.0209
GaAs HEMT MMIC LOW NOISE DRIVER AMPLIFIER, 22.0 - 26.5 GHz
1
Typical Applications Features
This HMC-ALH311 is ideal for: P1dB Output Power: +12 dBm IP • Point-to-Point Radios Gain: 25 dB H • Point-to-Multi-Point Radios Noise Figure: 3 dB @ 25 GHz C • Military & Space Supply Voltage: +2.5V @ 52 mA - • Test Instrumentation Die Size: 1.80 x 0.73 x 0.1 mm RS IE IF L P M
Functional Diagram General Description
A The HMC-ALH311 is a GaAs MMIC HEMT Low Noise E Driver Amplifi er die which operates between 22 and 26.5 GHz. The amplifi er provides 25 dB of gain, a IS typical noise fi gure of 3 dB at 25 GHz, and +12 dBm of O output power at 1 dB gain compression while requiring N only 52 mA from a +2.5V supply voltage. The HMC- W ALH311 is ideal for microwave radio driver amplifi er O applications between 22 to 26.5 GHz. Due to its small L size, the HMC-ALH311 die is ideal for integration into Multi-Chip-Modules (MCMs).
Electrical Specifi cations*, T = +25° C, Vdd = 2.5V A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 22 - 24 24 - 26.5 GHz Gain 22 25 dB Gain Variation over Temperature 0.03 dB / °C Noise Figure 3.5 4.5 3 3.5 dB Input Return Loss 10 15 dB Output Return Loss 12 15 dB Output Power for 1 dB Compression 12 12 dBm Supply Current (Vdd = 2.5V, Vgg1 = -0.3V Typ.) 52 52 mA *Unless otherwise indicated, all measurements are from probed die Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
1 - 144
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0209
GaAs HEMT MMIC LOW NOISE DRIVER AMPLIFIER, 22.0 - 26.5 GHz
1
Typical Applications Features
This HMC-ALH311 is ideal for: P1dB Output Power: +12 dBm IP • Point-to-Point Radios Gain: 25 dB H • Point-to-Multi-Point Radios Noise Figure: 3 dB @ 25 GHz C • Military & Space Supply Voltage: +2.5V @ 52 mA - • Test Instrumentation Die Size: 1.80 x 0.73 x 0.1 mm RS IE IF L P M
Functional Diagram General Description
A The HMC-ALH311 is a GaAs MMIC HEMT Low Noise E Driver Amplifi er die which operates between 22 and 26.5 GHz. The amplifi er provides 25 dB of gain, a IS typical noise fi gure of 3 dB at 25 GHz, and +12 dBm of O output power at 1 dB gain compression while requiring N only 52 mA from a +2.5V supply voltage. The HMC- W ALH311 is ideal for microwave radio driver amplifi er O applications between 22 to 26.5 GHz. Due to its small L size, the HMC-ALH311 die is ideal for integration into Multi-Chip-Modules (MCMs).
Electrical Specifi cations*, T = +25° C, Vdd = 2.5V A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 22 - 24 24 - 26.5 GHz Gain 22 25 dB Gain Variation over Temperature 0.03 dB / °C Noise Figure 3.5 4.5 3 3.5 dB Input Return Loss 10 15 dB Output Return Loss 12 15 dB Output Power for 1 dB Compression 12 12 dBm Supply Current (Vdd = 2.5V, Vgg1 = -0.3V Typ.) 52 52 mA *Unless otherwise indicated, all measurements are from probed die Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
1 - 144
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D