Datasheet HMC516 (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz |
| Páginas / Página | 6 / 4 — HMC516. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 7 - 17 GHz. Absolute … |
| Formato / tamaño de archivo | PDF / 579 Kb |
| Idioma del documento | Inglés |
HMC516. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 7 - 17 GHz. Absolute Maximum Ratings. Typical Supply Current vs. Vdd
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HMC516
v03.1017
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +4 Vdc Vdd (Vdc) Idd (mA) RF Input Power (RFIN)(Vdd = +3.0 Vdc) +5 dBm +2.5 61 Channel Temperature 175 °C +3.0 65 IP Continuous Pdiss (T= 85 °C) +3.5 69 H 1.65 W (derate 18.3 mW/°C above 85 °C) Note: Amplifier will operate over full voltage ranges shown Thermal Resistance 54.6 °C/W above. (channel to die bottom) E - C Storage Temperature -65 to +150 °C ELECTROSTATIC SENSITIVE DEVICE Operating Temperature -55 to +85 °C IS OBSERVE HANDLING PRECAUTIONS ESD Sensitivity (HBM) Class 1A O W N O
Outline Drawing
S - L R IE LIF P M A
Die Packaging Information
[1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] Standard Alternate 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE GP-2 (Gel Pack) [2] 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 6. BACKSIDE METAL IS GROUND. packaging dimensions. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
4
v03.1017
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +4 Vdc Vdd (Vdc) Idd (mA) RF Input Power (RFIN)(Vdd = +3.0 Vdc) +5 dBm +2.5 61 Channel Temperature 175 °C +3.0 65 IP Continuous Pdiss (T= 85 °C) +3.5 69 H 1.65 W (derate 18.3 mW/°C above 85 °C) Note: Amplifier will operate over full voltage ranges shown Thermal Resistance 54.6 °C/W above. (channel to die bottom) E - C Storage Temperature -65 to +150 °C ELECTROSTATIC SENSITIVE DEVICE Operating Temperature -55 to +85 °C IS OBSERVE HANDLING PRECAUTIONS ESD Sensitivity (HBM) Class 1A O W N O
Outline Drawing
S - L R IE LIF P M A
Die Packaging Information
[1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] Standard Alternate 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE GP-2 (Gel Pack) [2] 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 6. BACKSIDE METAL IS GROUND. packaging dimensions. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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