Datasheet HMC591 (Analog Devices) - 6
| Fabricante | Analog Devices |
| Descripción | GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz |
| Páginas / Página | 8 / 6 — HMC591. GaAs PHEMT MMIC 2 WATT. POWER AMPLIFIER, 6 - 10 GHz. Pad … |
| Formato / tamaño de archivo | PDF / 418 Kb |
| Idioma del documento | Inglés |
HMC591. GaAs PHEMT MMIC 2 WATT. POWER AMPLIFIER, 6 - 10 GHz. Pad Descriptions. 3 - 83
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HMC591
v02.0109
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Pad Descriptions
Pad Number Function Description Interface Schematic This pad is AC coupled and 1 RFIN matched to 50 Ohms. 3 Power Supply Voltage for the amplifi er. External bypass 3 - 5, 7, 8 Vdd 1-5 capacitors of 100 pF and 0.1 μF are required. IP This pad is AC coupled and 6 RFOUT H matched to 50 Ohms. Gate control for amplifi er. Adjust to achieve Idd of 1340 mA. Please follow “MMIC Amplifi er Biasing Procedure” S - C 9 Vgg Application Note. External bypass capacitors of 100 pF and R 0.1 μF are required. IE IF Die Bottom GND Die bottom must be connected to RF/DC ground. L P M R A E W O R & P A E IN L Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com
3 - 83
Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0109
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Pad Descriptions
Pad Number Function Description Interface Schematic This pad is AC coupled and 1 RFIN matched to 50 Ohms. 3 Power Supply Voltage for the amplifi er. External bypass 3 - 5, 7, 8 Vdd 1-5 capacitors of 100 pF and 0.1 μF are required. IP This pad is AC coupled and 6 RFOUT H matched to 50 Ohms. Gate control for amplifi er. Adjust to achieve Idd of 1340 mA. Please follow “MMIC Amplifi er Biasing Procedure” S - C 9 Vgg Application Note. External bypass capacitors of 100 pF and R 0.1 μF are required. IE IF Die Bottom GND Die bottom must be connected to RF/DC ground. L P M R A E W O R & P A E IN L Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com
3 - 83
Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D