Datasheet LTC3315B (Analog Devices) - 4

FabricanteAnalog Devices
DescripciónDual 5V, 2A Synchronous Step-Down DC/DCs in 2mm × 2mm LQFN
Páginas / Página22 / 4 — ELECTRICAL CHARACTERISTICS. Note 3:. Note 4:. Note 5:. Note 6:
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ELECTRICAL CHARACTERISTICS. Note 3:. Note 4:. Note 5:. Note 6:

ELECTRICAL CHARACTERISTICS Note 3: Note 4: Note 5: Note 6:

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LTC3315B
ELECTRICAL CHARACTERISTICS
characterization, and correlation with statistical process controls. The where θJA (in °C/W) is the package thermal impedance. See High LTC3315BI is guaranteed over the –40°C to 125°C operating junction Temperature Considerations section for more details. temperature range, the LTC3315BJ and the LTC3315BH are guaranteed
Note 3:
The LTC3315B includes overtemperature protection which over the –40°C to 150°C operating junction temperature range, and the protects the device during momentary overload conditions. Junction LTC3315BMP is guaranteed over the –55°C to 150°C operating junction temperatures will exceed 150°C when overtemperature protection is temperature range. High junction temperatures degrade operating active. Continuous operation above the specified maximum operating lifetimes; operating lifetime is derated for junction temperatures greater junction temperature may impair device reliability. than 125°C. Note that the maximum ambient temperature consistent
Note 4:
Static current, switches not switching. Actual current will be with these specifications is determined by specific operating conditions higher due to gate charge losses at the switching frequency. in conjunction with board layout, the rated package thermal impedance, and other environmental factors. The junction temperature (T
Note 5:
Overtemperature shutdown is not tested in production. J in °C) is calculated from ambient temperature (T
Note 6:
The soft-start time is the time from the start of switching until the A in °C) and power dissipation (PD in Watts) according to the formula: FB pin reaches 475mV. TJ = TA + (PD • θJA)
TYPICAL PERFORMANCE CHARACTERISTICS TA = 25°C, VIN = 3.3V, unless otherwise noted. VFB vs Temperature PMOS RDS(ON) vs Temperature NMOS RDS(ON) vs Temperature
510 150 50 V V 508 IN = 2.25V IN = 2.25V V 45 IN = 3.3V VIN = 3.3V 125 506 VIN = 5.5V V 40 IN = 5.5V 504 35 100 502 30 (mΩ) (mΩ) (mV) 500 75 25 V FB 498 R DS(ON) 20 R DS(ON) 50 496 15 494 10 25 492 5 490 0 0 –50 –25 0 25 50 75 100 125 150 –50 –25 0 25 50 75 100 125 150 –50 –25 0 25 50 75 100 125 150 TEMPERATURE (°C) TEMPERATURE (°C) TEMPERATURE (°C) 3315B G01 3315B G02 3315B G03
NMOS, PMOS Leakage vs Oscillator Frequency vs Oscillator Frequency vs Temperature Temperature T Oscillator Frequency vs VIN Oscillator Frequency vs VIN
3.2 8.0 6.6 NMOS, VIN = 5.5V, SW = 5.5V 5.5V 2.8 NMOS, VIN = 3.3V, SW = 3.3V 7.5 3.3V PMOS, VIN = 5.5V, SW = 0V 2.25V 6.4 2.4 PMOS, VIN = 3.3V, SW = 0V 7.0 2.0 6.2 6.5 1.6 6.0 6.0 LEAKAGE (µA) 1.2 5.5 FREQUENCY (MHz) 5.8 FREQUENCY (MHz) 0.8 5.0 0.4 5.6 4.5 0–50 –25 0 25 50 75 100 125 150 4.0 5.4 –50 –25 0 25 50 75 100 125 150 2 2.5 3 3.5 4 4.5 5 5.5 TEMPERATURE (°C) TEMPERATURE (C) V 3315B G04 IN (V) 3315B G05 3315B G06 Rev. 0 4 For more information www.analog.com Document Outline Features Applications Typical Application Description Absolute Maximum Ratings Order Information Electrical Characteristics Pin Configuration Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Typical Applications Package Description Typical Application Related Parts