Datasheet C2M0045170P (Wolfspeed) - 5

FabricanteWolfspeed
DescripciónSilicon Carbide Power MOSFET 1700 V 72 A 45 mΩ
Páginas / Página10 / 5 — Typical Performance. (A). -30. nt, I DS. -60. in-Source Curre. -90. Dra. …
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Typical Performance. (A). -30. nt, I DS. -60. in-Source Curre. -90. Dra. -120. Conditions:. TJ = -40 °C. TJ = 25 °C. tp < 200 µs. -150

Typical Performance (A) -30 nt, I DS -60 in-Source Curre -90 Dra -120 Conditions: TJ = -40 °C TJ = 25 °C tp < 200 µs -150

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Typical Performance -6 -5 -4 -3 -2 -1 0 -6 -5 -4 -3 -2 -1 0 0 0
VGS = 0 V VGS = 0 V
(A)
V
(A)
GS = 5 V
-30
V
-30
GS = 5 V
nt, I DS nt, I DS
VGS = 10 V VGS = 10 V
-60 -60
V V GS = 15 V GS = 15 V
in-Source Curre -90 in-Source Curre -90
V VGS = 20 V
Dra
GS = 20 V
Dra -120 -120 Conditions: Conditions: TJ = -40 °C TJ = 25 °C tp < 200 µs tp < 200 µs -150 -150 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)
Figure 13. 3rd Quadrant Characteristic at -40 ºC Figure 14. 3rd Quadrant Characteristic at 25 ºC
-6 -5 -4 -3 -2 -1 0 120 0
VGS = 0 V
100 (A) -30
VGS = 5 V
(µJ) 80 nt, I DS
VGS = 10 V VGS = 15 V
-60 y, E OSS 60
VGS = 20 V
d Energ in-Source Curre -90 40 Dra Store 20 -120 Conditions: TJ = 150 °C 0 tp < 200 µs 0 200 400 600 800 1000 1200 -150 Drain-Source Voltage V Drain to Source Voltage, V DS (V) DS (V)
Figure 15. 3rd Quadrant Characteristic at 150 ºC Figure 16. Output Capacitor Stored Energy
10000 10000 Conditions: Conditions: TJ = 25 °C TJ = 25 °C C V V iss AC = 25 mV C AC = 25 mV f = 1 MHz iss f = 1 MHz 1000 1000 Coss 100 C 100 oss Capacitance (pF) Crss Capacitance (pF) 10 10 Crss 1 1 0 50 100 150 200 0 200 400 600 800 1000 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)
Figure 17. Capacitances vs. Drain-Source Figure 18. Capacitances vs. Drain-Source Voltage (0-200 V) Voltage (0-1000 V)
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C2M0045170P Rev. -, 04-2018