Datasheet TIPL762 (Bourns)

FabricanteBourns
DescripciónNPN Silicon Power Transistors
Páginas / Página6 / 1 — TIPL762, TIPL762A. NPN SILICON POWER TRANSISTORS. Rugged Triple-Diffused …
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TIPL762, TIPL762A. NPN SILICON POWER TRANSISTORS. Rugged Triple-Diffused Planar Construction. SOT-93 PACKAGE. (TOP VIEW)

Datasheet TIPL762 Bourns

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TIPL762
TIPL762A

Versión de texto del documento

TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS

Rugged Triple-Diffused Planar Construction SOT-93 PACKAGE (TOP VIEW)

6 A Continuous Collector Current

Operating Characteristics Fully Guaranteed
B
1 at 100°C

1000 Volt Blocking Capability
C
2

120 W at 25°C Case Temperature
E
3
Pin 2 is in electrical contact with the mounting base. MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT
TIPL762 850 Collector-base voltage (IE = 0) V V TIPL762A CBO 1000 TIPL762 850 Collector-emitter voltage (VBE = 0) V V TIPL762A CES 1000 TIPL762 400 E Collector-emitter voltage (IB = 0) V V TIPL762A CEO 450 Emitter-base voltage VEBO 10 V Continuous collector current IC 6 A Peak collector current (see Note 1) ICM 12 A Continuous device dissipation at (or below) 25°C case temperature Ptot 120 W Operating junction temperature range Tj -65 to +150 °C Storage temperature range Tstg -65 to +150 °C NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. OBSOLET AUGUST 1978 - REVISED SEPTEMBER 2002 1 Specifications are subject to change without notice.