Datasheet MMBT2369L, MMBT2369AL (ON Semiconductor) - 3

FabricanteON Semiconductor
DescripciónSwitching Transistors NPN Silicon
Páginas / Página7 / 3 — MMBT2369L, MMBT2369AL. Figure 1. ton Circuit − 10 mA. Figure 2. ton …
Revisión11
Formato / tamaño de archivoPDF / 203 Kb
Idioma del documentoInglés

MMBT2369L, MMBT2369AL. Figure 1. ton Circuit − 10 mA. Figure 2. ton Circuit − 100 mA. Figure 3. toff Circuit − 10 mA

MMBT2369L, MMBT2369AL Figure 1 ton Circuit − 10 mA Figure 2 ton Circuit − 100 mA Figure 3 toff Circuit − 10 mA

Línea de modelo para esta hoja de datos

Versión de texto del documento

MMBT2369L, MMBT2369AL
t 270 W 95 W +10.6 V 1 3 V t1 10 V +10.8 V 0 -1.5 V 0 < 1 ns 3.3 k C -2 V s* < 4 pF < 1 ns 1 k Cs* < 12 pF PULSE WIDTH (t1) = 300 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% DUTY CYCLE = 2% *Total shunt capacitance of test jig and connectors.
Figure 1. ton Circuit − 10 mA Figure 2. ton Circuit − 100 mA
95 W t 270 W t 1 1 10 V +10.75 V +11.4 V 0 0 -9.15 V -8.6 V 1 k C < 1 ns 3.3 k C < 1 ns s* < 4 pF s* < 12 pF 1N916 PULSE WIDTH (t PULSE WIDTH (t 1) = 300 ns 1) BETWEEN DUTY CYCLE = 2% 10 AND 500 ms DUTY CYCLE = 2% *Total shunt capacitance of test jig and connectors.
Figure 3. toff Circuit − 10 mA Figure 4. toff Circuit − 100 mA
TO OSCILLOSCOPE
TURN-ON WAVEFORMS
INPUT IMPEDANCE = 50 W V RISE TIME = 1 ns in 0.1 mF 10% 220 W 0 Vout
TURN-OFF WAVEFORMS
Vout 3.3 kW 90% V 0 t in 10% on 3.3 k 50 W Vin 0.0023 mF 0.0023 mF 90% PULSE GENERATOR 50 W V 0.005 mF 0.005 mF out Vin RISE TIME < 1 ns VBB = +12 V SOURCE IMPEDANCE = 50 W V + 0.1 mF 0.1 mF + BB - - VCC = 3 V toff Vin = -15 V PW ≥ 300 ns DUTY CYCLE < 2%
Figure 5. Turn−On and Turn−Off Time Test Circuit www.onsemi.com 3