Datasheet BSN254, BSN254A (NXP) - 5

Philips Semiconductors Product specification N-channel enhancement mode BSN254; BSN254A vertical D-MOS transistor MGU570 MGU571 1.6 20 handbook, halfpage ID handbook, halfpage (1) (A) RDSon 1.4 (Ω) (2) 1.2 15 1 0.8 10 (3) 0.6 0.4 5 (4) (5) 0.2 (6) 0 0 0 2 4 6 8 10 10−1 1 10 V I GS (V) D (A) Tj = 25 °C. (1) VGS = 2.5 V. (3) VGS = 3.5 V. (5) VGS = 5 V. (2) VGS = 3 V. (4) VGS = 4 V. (6) VGS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.7 Drain-source on-state resistance as a Fig.6 Typical transfer characteristics. function of drain current; typical values. MGU572 250 handbook, halfpage C (pF) 200 150 100 Ciss 50 Coss Crss 0 0 10 20 30 VDS (V) VGS = 0; f = 1 MHz; Tj = 25 °C. Fig.8 Input, output and feedback capacitance as functions of drain-source voltage; typical values. 2002 Feb 19 5 Document Outline FEATURES APPLICATIONS DESCRIPTION QUICK REFERENCE DATA PINNING LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE SOT54 variant DATA SHEET STATUS DEFINITIONS DISCLAIMERS