Datasheet CPD73 (Central Semiconductor)
| Fabricante | Central Semiconductor |
| Descripción | Bridge Rectifier Monolithic Quad Diode Bridge Chip |
| Páginas / Página | 9 / 1 — PROCESS. Monolithic Quad Diode Bridge Chip. PROCESS DETAILS. GEOMETRY. … |
| Formato / tamaño de archivo | PDF / 709 Kb |
| Idioma del documento | Inglés |
PROCESS. Monolithic Quad Diode Bridge Chip. PROCESS DETAILS. GEOMETRY. GROSS DIE PER 3 INCH WAFER. PRINCIPAL DEVICE TYPES
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PROCESS
CPD73 Bridge Rectifier
Monolithic Quad Diode Bridge Chip PROCESS DETAILS
Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 (+DC) 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC) 3.0 x 7.0 MILS Top Side Metalization Al - 12,000Å Back Side Metalization Au - 5,000Å
GEOMETRY GROSS DIE PER 3 INCH WAFER
10,000
PRINCIPAL DEVICE TYPES
CMFBR-6F R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
CPD73 Bridge Rectifier
Monolithic Quad Diode Bridge Chip PROCESS DETAILS
Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 (+DC) 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC) 3.0 x 7.0 MILS Top Side Metalization Al - 12,000Å Back Side Metalization Au - 5,000Å
GEOMETRY GROSS DIE PER 3 INCH WAFER
10,000
PRINCIPAL DEVICE TYPES
CMFBR-6F R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m