Datasheet Si2369DS (Vishay) - 4
| Fabricante | Vishay |
| Descripción | P-Channel 30 V (D-S) MOSFET |
| Páginas / Página | 9 / 4 — Si2369DS. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. … |
| Formato / tamaño de archivo | PDF / 202 Kb |
| Idioma del documento | Inglés |
Si2369DS. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. On-Resistance vs. Gate-to-Source Voltage
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Si2369DS
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 100 0.080 I = 5.4 A D ) 0.060 (A 10 rrent tance (Ω u is T = 150 °C s T = 125 °C J 0.040 J -Re n ource C S T = 25 °C T = 25 °C J - O J 1 ) - n I S (o S D 0.020 R 0.1 0.000 0.0 0.3 0.6 0.9 1.2 2 4 6 8 10 V - Source-to-Drain Voltage (V) SD V - Gate-to-Source Voltage (V) GS
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
2 10 I = 250 μA D 8 1.75 ) 6 (V ) (th 1.5 GSV Power (W) 4 1.25 2 TA = 25 °C 1 0 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 T - Temperature (°C) J Time (s)
Threshold Voltage Single Pulse Power (Junction-to-Ambient)
100 10 Limited by RDS(on)* ) 100 μs t (A n 1 1 ms rre u 10 ms C in ra 0.1 100 ms - D I D 10s, 1 s DC 0.01 T = 25 °C A Single Pulse BVDSS Limited 0.001 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified GS GS DS(on)
Safe Operating Area, Junction-to-Ambient
S13-1663-Rev. A, 29-Jul-13
4
Document Number: 62865 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 100 0.080 I = 5.4 A D ) 0.060 (A 10 rrent tance (Ω u is T = 150 °C s T = 125 °C J 0.040 J -Re n ource C S T = 25 °C T = 25 °C J - O J 1 ) - n I S (o S D 0.020 R 0.1 0.000 0.0 0.3 0.6 0.9 1.2 2 4 6 8 10 V - Source-to-Drain Voltage (V) SD V - Gate-to-Source Voltage (V) GS
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
2 10 I = 250 μA D 8 1.75 ) 6 (V ) (th 1.5 GSV Power (W) 4 1.25 2 TA = 25 °C 1 0 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 T - Temperature (°C) J Time (s)
Threshold Voltage Single Pulse Power (Junction-to-Ambient)
100 10 Limited by RDS(on)* ) 100 μs t (A n 1 1 ms rre u 10 ms C in ra 0.1 100 ms - D I D 10s, 1 s DC 0.01 T = 25 °C A Single Pulse BVDSS Limited 0.001 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified GS GS DS(on)
Safe Operating Area, Junction-to-Ambient
S13-1663-Rev. A, 29-Jul-13
4
Document Number: 62865 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000