Datasheet Si2369DS (Vishay) - 6

FabricanteVishay
DescripciónP-Channel 30 V (D-S) MOSFET
Páginas / Página9 / 6 — Si2369DS. TYPICAL CHARACTERISTICS. Normalized Thermal Transient …
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Si2369DS. TYPICAL CHARACTERISTICS. Normalized Thermal Transient Impedance, Junction-to-Ambient

Si2369DS TYPICAL CHARACTERISTICS Normalized Thermal Transient Impedance, Junction-to-Ambient

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Si2369DS
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 ransient 0.2 T 0.1 Impedance Notes: fective Ef 0.1 PDM 0.05 Thermal t1 0.02 t2 Normalized t1 1. Duty Cycle, D = t2 2. Per Unit Base = RthJA = 166 °C/W 3. T (t) JM - TA = PDMZthJA 4. Surface Mounted Single Pulse 0.01 10-3 10-2 10-1 10-4 1 10 100 1000 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5 0.2 ransient T 0.1 Impedance fective Ef 0.1 0.05 Thermal 0.02 Normalized Single Pulse 0.01 10-3 10-2 10-1 10-4 1 10 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
                    Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62865. S13-1663-Rev. A, 29-Jul-13
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Document Number: 62865 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000