Datasheet FDN302P (Fairchild) - 2

FabricanteFairchild
DescripciónP-Channel 2.5V Specified PowerTrench MOSFET
Páginas / Página5 / 2 — F DN30. Electrical Characteristics. Symbol. Parameter. Test Conditions. …
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F DN30. Electrical Characteristics. Symbol. Parameter. Test Conditions. Min. Typ. Max. Units. 2 P. Off Characteristics. On Characteristics

F DN30 Electrical Characteristics Symbol Parameter Test Conditions Min Typ Max Units 2 P Off Characteristics On Characteristics

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F DN30 Electrical Characteristics
T = 25°C unless otherwise noted A
Symbol Parameter Test Conditions Min Typ Max Units 2 P Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V ∆BVDSS Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C –12 mV/°C ===∆T Coefficient J IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.6 –1.0 –1.5 V ∆VGS(th) Gate Threshold Voltage ID = –250 µA, Referenced to 25°C 3 mV/°C ===∆T Temperature Coefficient J RDS(on) Static Drain–Source VGS = –4.5 V, ID = –2.4 A 44 55 mΩ On–Resistance VGS = –2.5 V, ID = –2 A 64 80 VGS = –4.5 V, ID = –2.4A, TJ =125°C 58 84 ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –10 A gFS Forward Transconductance VDS = –5 V, ID = –2.4 A 10 S
Dynamic Characteristics
Ciss Input Capacitance 882 pF VDS = –10 V, V GS = 0 V, Coss Output Capacitance f = 1.0 MHz 211 pF Crss Reverse Transfer Capacitance 112 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time V 13 23 ns DD = –10 V, ID = –1 A, t V r Turn–On Rise Time GS = –4.5 V, RGEN = 6 Ω 11 20 ns td(off) Turn–Off Delay Time 25 40 ns tf Turn–Off Fall Time 15 27 ns Qg Total Gate Charge V 9 14 nC DS = –10 V, ID = –2.4 A, Q VGS = –4.5 V gs Gate–Source Charge 2 nC Qgd Gate–Drain Charge 3 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –0.42 A VSD Drain–Source Diode Forward VGS = 0 V, IS = –0.42 (Note 2) –0.7 –1.2 V Voltage
Notes: 1.
Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of JA the drain pins. Rθ is guaranteed by design while R is determined by the user's board design. JC θCA a) 250°C/W when mounted on a b) 270°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. minimum pad. Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width ≤=300 µs, Duty Cycle ≤=2.0% FDN302P Rev C(W)