Datasheet 2N2906, 2N2907, 2N2906A, 2N2907A (Central Semiconductor)
| Fabricante | Central Semiconductor |
| Descripción | PNP SILICON TRANSISTOR |
| Páginas / Página | 4 / 1 — 2N2906 2N2906A 2N2907 2N2907A. w w w. c e n t r a l s e m i . c o m. … |
| Formato / tamaño de archivo | PDF / 687 Kb |
| Idioma del documento | Inglés |
2N2906 2N2906A 2N2907 2N2907A. w w w. c e n t r a l s e m i . c o m. DESCRIPTION:. PNP SILICON TRANSISTOR
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2N2906 2N2906A 2N2907 2N2907A w w w. c e n t r a l s e m i . c o m DESCRIPTION: PNP SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications.
MARKING: FULL PART NUMBER TO-18 CASE 2N2906 2N2906A MAXIMUM RATINGS:
(TA=25°C)
SYMBOL 2N2907 2N2907A UNITS
Collector-Base Voltage VCBO 60 60 V Collector-Emitter Voltage VCEO 40 60 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 600 mA Power Dissipation PD 400 mW Power Dissipation (TC=25°C) PD 1.8 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance ΘJA 438 °C/W Thermal Resistance ΘJC 97 °C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
2N2906 2N2906A 2N2907 2N2907A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO VCB=50V - 20 - 10 nA ICBO VCB=50V, TA=150°C - 20 - 10 μA ICEV VCE=30V, VEB=0.5V - 50 - 50 nA BVCBO IC=10μA 60 - 60 - V BVCEO IC=10mA 40 - 60 - V BVEBO IE=10μA 5.0 - 5.0 - V VCE(SAT) IC=150mA, IB=15mA - 0.4 - 0.4 V VCE(SAT) IC=500mA, IB=50mA - 1.6 - 1.6 V VBE(SAT) IC=150mA, IB=15mA - 1.3 - 1.3 V VBE(SAT) IC=500mA, IB=50mA - 2.6 - 2.6 V fT VCE=20V, IC=50mA, f=100MHz 200 - 200 - MHz Cob VCB=10V, IE=0, f=1.0MHz - 8.0 - 8.0 pF Cib VEB=2.0V, IC=0, f=1.0MHz - 30 - 30 pF ton VCC=30V, IC=150mA, IB1=15mA - 45 - 45 ns toff VCC=6.0V, IC=150mA, IB1=IB2=15mA - 100 - 100 ns R4 (30-January 2012)
The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications.
MARKING: FULL PART NUMBER TO-18 CASE 2N2906 2N2906A MAXIMUM RATINGS:
(TA=25°C)
SYMBOL 2N2907 2N2907A UNITS
Collector-Base Voltage VCBO 60 60 V Collector-Emitter Voltage VCEO 40 60 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 600 mA Power Dissipation PD 400 mW Power Dissipation (TC=25°C) PD 1.8 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance ΘJA 438 °C/W Thermal Resistance ΘJC 97 °C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
2N2906 2N2906A 2N2907 2N2907A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO VCB=50V - 20 - 10 nA ICBO VCB=50V, TA=150°C - 20 - 10 μA ICEV VCE=30V, VEB=0.5V - 50 - 50 nA BVCBO IC=10μA 60 - 60 - V BVCEO IC=10mA 40 - 60 - V BVEBO IE=10μA 5.0 - 5.0 - V VCE(SAT) IC=150mA, IB=15mA - 0.4 - 0.4 V VCE(SAT) IC=500mA, IB=50mA - 1.6 - 1.6 V VBE(SAT) IC=150mA, IB=15mA - 1.3 - 1.3 V VBE(SAT) IC=500mA, IB=50mA - 2.6 - 2.6 V fT VCE=20V, IC=50mA, f=100MHz 200 - 200 - MHz Cob VCB=10V, IE=0, f=1.0MHz - 8.0 - 8.0 pF Cib VEB=2.0V, IC=0, f=1.0MHz - 30 - 30 pF ton VCC=30V, IC=150mA, IB1=15mA - 45 - 45 ns toff VCC=6.0V, IC=150mA, IB1=IB2=15mA - 100 - 100 ns R4 (30-January 2012)