Datasheet ADG658-EP (Analog Devices) - 3

FabricanteAnalog Devices
Descripción+3V/+5V/± 5V CMOS 8-Channel Analog Multiplexer
Páginas / Página10 / 3 — Enhanced Product. ADG658-EP. SPECIFICATIONS DUAL SUPPLY. Table 1. −55°C …
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Enhanced Product. ADG658-EP. SPECIFICATIONS DUAL SUPPLY. Table 1. −55°C to. Parameter. +25°C. +125°C. Unit. Test Conditions/Comments

Enhanced Product ADG658-EP SPECIFICATIONS DUAL SUPPLY Table 1 −55°C to Parameter +25°C +125°C Unit Test Conditions/Comments

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Enhanced Product ADG658-EP SPECIFICATIONS DUAL SUPPLY
VDD = 5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. −55°C to Parameter +25°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VSS to VDD V VDD = +4.5 V, VSS = −4.5 V On Resistance, RON 45 Ω typ Source voltage (VS) = ±4.5 V, source current (IS) = 1 mA 75 100 Ω max On Resistance Match Between 1.3 Ω typ Channels, ∆RON 3 3.5 Ω max VS = 3.5 V, IS = 1 mA On Resistance Flatness, RFLAT(ON) 10 Ω typ VDD = +5 V, VSS = −5 V 16 18 Ω max VS = ±3 V, IS = 1 mA LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V Source Off Leakage, IS (OFF) ±0.005 nA typ Drain voltage (VD) = ±4.5 V, VS =  4.5 V ±0.2 ±5 nA max Drain Off Leakage, ID (OFF) ±0.005 nA typ VD = ±4.5 V, VS =  4.5 V ±0.2 ±5 nA max Channel On Leakage ID, IS (ON) ±0.005 nA typ VD = VS = ±4.5 V ±0.2 ±5 nA max DIGITAL INPUTS Input High Voltage, VINH 2.4 V min Input Low Voltage, VINL 0.8 V max Input Current IINL or IINH 0.005 µA typ Input voltage (VIN) = VINL or VINH ±1 µA max Digital Input Capacitance, CIN 2 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 80 ns typ Load resistance (RL) = 300 Ω, load capacitance (CL) = 35 pF 115 165 ns max VS = 3 V EN On Time, tON (EN) 80 ns typ RL = 300 Ω, CL = 35 pF 115 165 ns max VS = 3 V EN Off Time, tOFF (EN) 30 ns typ RL = 300 Ω, CL = 35 pF 45 55 ns max VS = 3 V Break-Before-Make Time Delay, tBBM 50 ns typ RL = 300 Ω, CL = 35 pF 10 ns min Source 1 voltage (VS1) = 3 V, source 2 voltage (VS2) = 3 V Charge Injection 2 pC typ VS = 0 V, RS = 0 Ω 4 pC max CL = 1 nF Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz Total Harmonic Distortion Plus Noise, THD + N 0.025 % typ RL = 600 Ω, 2 V p-p, f = 20 Hz to 20 kHz −3 dB Bandwidth 210 MHz RL = 50 Ω, CL = 5 pF typ Source Capacitance, CS (OFF) 4 pF typ f = 1 MHz Drain Capacitance, CD (OFF) 23 pF typ f = 1 MHz CD, CS (ON) 28 pF typ f = 1 MHz POWER REQUIREMENTS VDD = +5.5 V, VSS = −5.5 V Positive Power Supply Current, IDD 0.01 µA typ Digital inputs = 0 V or 5.5 V 1 µA max Negative Power Supply Current, ISS 0.01 µA typ Digital inputs = 0 V or 5.5 V 1 µA max 1 Guaranteed by design; not subject to production test. Rev. 0 | Page 3 of 10 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY 5 V SINGLE SUPPLY 2.7 V TO 3.6 V SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE