Datasheet ADG619-EP (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | CMOS, ±5 V/+5 V, 4 Ω, Single SPDT Switch |
| Páginas / Página | 12 / 4 — ADG619-EP. SINGLE SUPPLY. Table 2. Parameter. +25°C. −55°C to +125°C. … |
| Formato / tamaño de archivo | PDF / 226 Kb |
| Idioma del documento | Inglés |
ADG619-EP. SINGLE SUPPLY. Table 2. Parameter. +25°C. −55°C to +125°C. Unit. Test Conditions/Comments
Línea de modelo para esta hoja de datos
Versión de texto del documento
link to page 8 link to page 8 link to page 8 link to page 8 link to page 8 link to page 8 link to page 8 link to page 8 link to page 9 link to page 9 link to page 4
ADG619-EP SINGLE SUPPLY
VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V. All specifications −55°C to +125°C, unless otherwise noted.
Table 2. Parameter +25°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 V to V V V = 4.5 V, V = 0 V DD DD SS On Resistance (R ) 7 Ω typ V = 0 V to 4.5 V, I = −10 mA; see Figure 9 ON S DS 10 14 Ω max R Match Between Channels (ΔR ) 0.8 Ω typ V = 0 V to 4.5 V, I = −10mA ON ON S DS 1.1 1.4 Ω max On-Resistance Flatness (R ) 0.5 Ω typ V = 1.5 V to 3.3 V, I = −10 mA FLAT (ON) S DS 1.4 Ω max LEAKAGE CURRENTS V = 5.5 V DD Source Off Leakage, I (Off) ±0.01 nA typ V = 1 V/4.5 V, V = 4.5 V/1 V; see Figure 10 S S D ±0.25 ±3 nA max Channel On Leakage, I , I (On) ±0.01 nA typ V = V = 1 V/4.5 V; see Figure 11 D S S D ±0.25 ±25 nA max DIGITAL INPUTS Input High Voltage, V 2.4 V min INH Input Low Voltage, V 0.8 V max INL Input Current, I or I 0.005 µA typ V = V or V INL INH IN INL INH ±0.1 µA max Digital Input Capacitance, C 2 pF typ IN DYNAMIC CHARACTERISTICS1 t 120 ns typ R = 300 Ω, C = 35 pF ON L L 220 390 ns max V = 3.3 V; see Figure 12 S t 50 ns typ R = 300 Ω, C = 35 pF OFF L L 75 135 ns max V = 3.3 V; see Figure 12 S Break-Before-Make Time Delay, t 70 ns typ R = 300 Ω, C = 35 pF BBM L L 10 ns min V = V = 3.3 V; see Figure 13 S1 S2 Charge Injection 6 pC typ V = 0 V, R = 0 Ω, C = 1 nF; see Figure 14 S S L Off Isolation −67 dB typ R = 50 Ω, C = 5 pF, f = 1 MHz; see Figure 15 L L Channel-to-Channel Crosstalk −67 dB typ R = 50 Ω, C = 5 pF, f = 1 MHz; see Figure 16 L L Bandwidth −3 dB 190 MHz typ R = 50 Ω, C = 5 pF; see Figure 17 L L C (OFF) 25 pF typ f = 1 MHz S C , C (ON) 95 pF typ f = 1 MHz D S POWER REQUIREMENTS V = 5.5 V DD I 0.001 μA typ Digital inputs = 0 V or 5.5 V DD 1.0 μA max 1 Guaranteed by design, not subject to production test. Rev. 0 | Page 4 of 12 Document Outline Features Applications Functional Block Diagram General Description Product Highlights Revision History Specifications Dual Supply Single Supply Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Typical Performance Characteristics Test Circuits Outline Dimensions Ordering Guide
ADG619-EP SINGLE SUPPLY
VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V. All specifications −55°C to +125°C, unless otherwise noted.
Table 2. Parameter +25°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 V to V V V = 4.5 V, V = 0 V DD DD SS On Resistance (R ) 7 Ω typ V = 0 V to 4.5 V, I = −10 mA; see Figure 9 ON S DS 10 14 Ω max R Match Between Channels (ΔR ) 0.8 Ω typ V = 0 V to 4.5 V, I = −10mA ON ON S DS 1.1 1.4 Ω max On-Resistance Flatness (R ) 0.5 Ω typ V = 1.5 V to 3.3 V, I = −10 mA FLAT (ON) S DS 1.4 Ω max LEAKAGE CURRENTS V = 5.5 V DD Source Off Leakage, I (Off) ±0.01 nA typ V = 1 V/4.5 V, V = 4.5 V/1 V; see Figure 10 S S D ±0.25 ±3 nA max Channel On Leakage, I , I (On) ±0.01 nA typ V = V = 1 V/4.5 V; see Figure 11 D S S D ±0.25 ±25 nA max DIGITAL INPUTS Input High Voltage, V 2.4 V min INH Input Low Voltage, V 0.8 V max INL Input Current, I or I 0.005 µA typ V = V or V INL INH IN INL INH ±0.1 µA max Digital Input Capacitance, C 2 pF typ IN DYNAMIC CHARACTERISTICS1 t 120 ns typ R = 300 Ω, C = 35 pF ON L L 220 390 ns max V = 3.3 V; see Figure 12 S t 50 ns typ R = 300 Ω, C = 35 pF OFF L L 75 135 ns max V = 3.3 V; see Figure 12 S Break-Before-Make Time Delay, t 70 ns typ R = 300 Ω, C = 35 pF BBM L L 10 ns min V = V = 3.3 V; see Figure 13 S1 S2 Charge Injection 6 pC typ V = 0 V, R = 0 Ω, C = 1 nF; see Figure 14 S S L Off Isolation −67 dB typ R = 50 Ω, C = 5 pF, f = 1 MHz; see Figure 15 L L Channel-to-Channel Crosstalk −67 dB typ R = 50 Ω, C = 5 pF, f = 1 MHz; see Figure 16 L L Bandwidth −3 dB 190 MHz typ R = 50 Ω, C = 5 pF; see Figure 17 L L C (OFF) 25 pF typ f = 1 MHz S C , C (ON) 95 pF typ f = 1 MHz D S POWER REQUIREMENTS V = 5.5 V DD I 0.001 μA typ Digital inputs = 0 V or 5.5 V DD 1.0 μA max 1 Guaranteed by design, not subject to production test. Rev. 0 | Page 4 of 12 Document Outline Features Applications Functional Block Diagram General Description Product Highlights Revision History Specifications Dual Supply Single Supply Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Typical Performance Characteristics Test Circuits Outline Dimensions Ordering Guide