Datasheet TCET1100, TCET1100G (Vishay) - 5

FabricanteVishay
DescripciónOptocoupler, Phototransistor Output, High Temperature
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TCET1100, TCET1100G. SWITCHING CHARACTERISTICS PARAMETER. TEST CONDITION. SYMBOL. MIN. TYP. MAX. UNIT

TCET1100, TCET1100G SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN TYP MAX UNIT

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TCET1100, TCET1100G
www.vishay.com Vishay Semiconductors
SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
V Delay time S = 5 V, IC = 2 mA, RL = 100 Ω, t (see Fig. 3) d - 3 - μs V Rise time S = 5 V, IC = 2 mA, RL = 100 Ω, t (see Fig. 3) r - 3 - μs V Turn-on time S = 5 V, IC = 2 mA, RL = 100 Ω, t (see Fig. 3) on - 6 - μs V Storage time S = 5 V, IC = 2 mA, RL = 100 Ω, t (see Fig. 3) s - 0.3 - μs V Fall time S = 5 V, IC = 2 mA, RL = 100 Ω, t (see Fig. 3) f - 4.7 - μs V Turn-off time S = 5 V, IC = 2 mA, RL = 100 Ω, t (see Fig. 3) off - 5 - μs V Turn-on time S = 5 V, IF = 10 mA, RL = 1 kΩ, t (see Fig. 4) on - 9 - μs V Turn-off time S = 5 V, IF = 10 mA, RL = 1 kΩ, t (see Fig. 4) off - 10 - μs I F I I + 5 V F F 0 0 IC = 2 mA; adjusted through t p t I input amplitude C 100 % R 90 % G = 50 Ω tp = 0.01 T tp = 50 µs Channel I 10 % Oscilloscope 0 t R r Channel II L = 1 MΩ t t t C d t f L = 20 pF s t t 50 Ω 100 Ω on off tp Pulse duration ts Storage time td Delay time t f Fall time t t (= t 95 10804 r Rise time off s + tf) Turn-off time ton (= td + tr) Turn-on time 96 11698 Fig. 3 - Test Circuit, Non-Saturated Operation Fig. 5 - Switching Times I I + 5 V F F = 10 mA 0 IC RG = 50 Ω t p = 0.01 T t p = 50 µs Channel I Oscilloscope R 1 MΩ Channel II L ≥ CL ≤ 20 pF 50 Ω 1 kΩ 95 10843 Fig. 4 - Test Circuit, Saturated Operation Rev. 2.4, 13-Jan-2021
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