Datasheet MBD701, MMBD701L, SMMBD701L (ON Semiconductor) - 3

FabricanteON Semiconductor
DescripciónSilicon Hot-Carrier Diodes Schottky Barrier Diodes
Páginas / Página6 / 3 — MBD701, MMBD701L, SMMBD701L. TYPICAL ELECTRICAL CHARACTERISTICS. Figure …
Revisión7
Formato / tamaño de archivoPDF / 188 Kb
Idioma del documentoInglés

MBD701, MMBD701L, SMMBD701L. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. Total Capacitance

MBD701, MMBD701L, SMMBD701L TYPICAL ELECTRICAL CHARACTERISTICS Figure 1 Total Capacitance

Línea de modelo para esta hoja de datos

Versión de texto del documento

MBD701, MMBD701L, SMMBD701L TYPICAL ELECTRICAL CHARACTERISTICS
2.0 500 f = 1.0 MHz 1.6 (pF) 400 KRAKAUER METHOD ANCE 1.2 300 ACIT CAP 0.8 AL 200 , TOT TC 0.4 100 , MINORITY CARRIER LIFETIME (ps) t 0 0 0 5.0 10 15 20 25 30 35 40 45 50 0 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (VOLTS) IF, FORWARD CURRENT (mA)
Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime
10 100 T A) A = 100°C m 1.0 10 T T A = 85°C A = -40°C TA = 75°C 0.1 ARD CURRENT (mA) 1.0 T , REVERSE LEAKAGE ( 0.01 , FORW A = 25°C T I R A = 25°C I F 0.001 0.1 0 10 20 30 40 50 0 0.2 0.4 0.8 1.2 1.6 2.0 VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)
Figure 3. Reverse Leakage Figure 4. Forward Voltage
IF(PEAK) CAPACITIVE CONDUCTION IR(PEAK) FORWARD STORAGE CONDUCTION CONDUCTION BALLAST SAMPLING SINUSOIDAL NETWORK PADS OSCILLOSCOPE GENERATOR (PADS) (50 W INPUT) DUT
Figure 5. Krakauer Method of Measuring Lifetime www.onsemi.com 3