Datasheet MBRS130T3G, NRVBS130T3G, NRVBS130N (ON Semiconductor) - 3

FabricanteON Semiconductor
DescripciónSurface Mount Schottky Power Rectifier
Páginas / Página5 / 3 — MBRS130T3G, NRVBS130T3G, NRVBS130N. TYPICAL CHARACTERISTICS. Figure 1. …
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MBRS130T3G, NRVBS130T3G, NRVBS130N. TYPICAL CHARACTERISTICS. Figure 1. Typical Forward Voltage

MBRS130T3G, NRVBS130T3G, NRVBS130N TYPICAL CHARACTERISTICS Figure 1 Typical Forward Voltage

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MBRS130T3G, NRVBS130T3G, NRVBS130N TYPICAL CHARACTERISTICS
100 50 (AMPS) 1 30 T T C = 100°C J = 125°C 20 0.7 0.5 (mA) 10 100°C 5 3 0.3 2 ARD CURRENT 75°C W 0.2 1 0.5 0.1 0.3 0.2 25 0.07 °C TC = 25°C , REVERSE CURRENT 0.1 ANEOUS FOR 0.05 I R 0.05 ANT 0.03 0.03 0.02 0.02 , INST 0.01 i F 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 4 8 12 16 20 24 28 32 36 40 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current
200 180 NOTE: TYPICAL CAPACITANCE 160 AT 0 V = 160 pF 140 120 ANCE (pF) 100 ACIT 80 C, CAP 60 40 20 0 0 4 8 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
10 TTS) A 5 DC (AMPS) 9 RATED VOLTAGE APPLIED T SQUARE J = 125°C WAVE R 8 qJC = 12°C/W TION (W 4 T A J = 125°C π CURRENT 7 5 6 3 ARD W CAPACITANCE 5 FOR LOAD 10 4 2 I DC PK 20 3 = SQUARE WAVE IAV VERAGE VERAGE POWER DISSIP 1 , A 2 , A V) 1 V) I F(A F(A 0 P 0 30 40 50 60 70 80 90 100 110 120 130 0 1 2 3 4 5 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Current Derating (Case) Figure 5. Power Dissipation www.onsemi.com 3