Datasheet Si1308EDL (Vishay) - 3

FabricanteVishay
DescripciónN-Channel 30 V (D-S) MOSFET
Páginas / Página11 / 3 — Si1308EDL. TYPICAL CHARACTERISTICS. Gate Source Voltage vs. Gate Current. …
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Si1308EDL. TYPICAL CHARACTERISTICS. Gate Source Voltage vs. Gate Current. Output Characteristics

Si1308EDL TYPICAL CHARACTERISTICS Gate Source Voltage vs Gate Current Output Characteristics

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Si1308EDL
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 0.006 10-3 T = 25 °C J 0.005 10-4 ) A 0.004 10-5 T = 150 °C rrent (A J u 0.003 10-6 ate C ate Current (m G G - T = 25 °C 0.002 J - 10-7 S S I GS I GS 0.001 10-8 0.000 10-9 0 3 6 9 12 15 0 5 10 15 V - Gate-Source Voltage (V) V - Gate-to-Source Voltage (V) GS GS
Gate Source Voltage vs. Gate Current Gate Source Voltage vs. Gate Current
6 0.20 V = 10 V thru 3 V GS ) 4.5 0.17 (A) rent tance (Ω is V = 2.5 V s GS 3 e 0.14 in Cur -R n ra V = 2 V V = 4.5 V GS D GS - -O )n I D (o S 1.5 D 0.11 R V = 10 V GS 0 0.08 0 0.5 1 1.5 2 0 1.5 3 4.5 6 V - Drain-to-Source Voltage (V) I - Drain Current (A) DS D
Output Characteristics On-Resistance vs. Drain Current
2 10 I = 1.4 A D (V) 8 1.5 V = 8 V DS tage (A) 6 rent V = 15 V DS 1 ource Vol S in Cur ra to- 4 V = 24 V D DS - T = 25 °C C ate- I D G 0.5 - GS 2 V T = 125 °C C T = - 55 °C C 0 0 0 0.5 1 1.5 2 0 0.7 1.4 2.1 2.8 V - Gate-to-Source Voltage (V) GS Q - Total Gate Charge (nC) g
Transfer Characteristics Gate Charge
S14-1997-Rev. C, 06-Oct-14
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