Datasheet MBR2090CT-M3, MBR20100CT-M3 (Vishay) - 3
| Fabricante | Vishay |
| Descripción | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| Páginas / Página | 4 / 3 — MBR2090CT-M3, MBR20100CT-M3. PACKAGE OUTLINE DIMENSIONS. TO-220AB |
| Formato / tamaño de archivo | PDF / 121 Kb |
| Idioma del documento | Inglés |
MBR2090CT-M3, MBR20100CT-M3. PACKAGE OUTLINE DIMENSIONS. TO-220AB
Línea de modelo para esta hoja de datos
Versión de texto del documento
MBR2090CT-M3, MBR20100CT-M3
www.vishay.com Vishay General Semiconductor 100 10 000 T = 25 °C J f = 1 MHz T = 150 °C V = 50 mVp-p J sig 10 1000 T = 125 °C J ard Current (A) rw 1 o 100 0.1 T = 25 °C nction Capacitance (pF) J u J Instantaneous F 0.01 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 100 T = 150 °C J Junction to Case 10 (°C/W) T = 125 °C J 10 1 rse Current (mA) e v Impedance 0.1 mal 1 0.01 T = 25 °C ansient Ther Instantaneous Re J r T 0.001 0.1 10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) 0.380 (9.65) 0.161 (4.08) 0.185 (4.70) 0.139 (3.53) 0.175 (4.44) 0.055 (1.39) 0.113 (2.87) 0.045 (1.14) 0.103 (2.62) 0.635 (16.13) 0.603 (15.32) 0.625 (15.87) 0.573 (14.55) PIN 0.350 (8.89) 1 2 3 0.330 (8.38) 0.160 (4.06) 1.148 (29.16) 0.140 (3.56) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.104 (2.65) 0.028 (0.70) 0.022 (0.56) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.014 (0.36) Revision: 11-May-16
3
Document Number: 89192 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay General Semiconductor 100 10 000 T = 25 °C J f = 1 MHz T = 150 °C V = 50 mVp-p J sig 10 1000 T = 125 °C J ard Current (A) rw 1 o 100 0.1 T = 25 °C nction Capacitance (pF) J u J Instantaneous F 0.01 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 100 T = 150 °C J Junction to Case 10 (°C/W) T = 125 °C J 10 1 rse Current (mA) e v Impedance 0.1 mal 1 0.01 T = 25 °C ansient Ther Instantaneous Re J r T 0.001 0.1 10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) 0.380 (9.65) 0.161 (4.08) 0.185 (4.70) 0.139 (3.53) 0.175 (4.44) 0.055 (1.39) 0.113 (2.87) 0.045 (1.14) 0.103 (2.62) 0.635 (16.13) 0.603 (15.32) 0.625 (15.87) 0.573 (14.55) PIN 0.350 (8.89) 1 2 3 0.330 (8.38) 0.160 (4.06) 1.148 (29.16) 0.140 (3.56) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.104 (2.65) 0.028 (0.70) 0.022 (0.56) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.014 (0.36) Revision: 11-May-16
3
Document Number: 89192 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000