Datasheet TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) (ON Semiconductor) - 5
| Fabricante | ON Semiconductor |
| Descripción | Plastic Medium-Power Complementary Silicon Transistors |
| Páginas / Página | 8 / 5 — TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP). ACTIVE−REGION … |
| Formato / tamaño de archivo | PDF / 157 Kb |
| Idioma del documento | Inglés |
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP). ACTIVE−REGION SAFE−OPERATING AREA. Figure 6. TIP115, 116, 117
Línea de modelo para esta hoja de datos
Versión de texto del documento
link to page 5 link to page 5 link to page 4
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) ACTIVE−REGION SAFE−OPERATING AREA
10 10 4.0 4.0 (AMPS) 1ms (AMPS) 2.0 5ms 2.0 TJ = 150°C dc TJ = 150°C dc 1.0 BONDING WIRE LIMITED 1.0 BONDING WIRE LIMITED THERMALLY LIMITED OR CURRENT OR CURRENT THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) @ TC = 25°C (SINGLE PULSE) SECONDARY BREAKDOWN LIMITED SECONDARY BREAKDOWN LIMITED , COLLECT , COLLECT I C TIP115 CURVES APPLY BELOW I C CURVES APPLY BELOW TIP110 TIP116 TIP111 RATED V RATED V CEO CEO TIP117 TIP112 0.1 0.1 1.0 10 40 60 80 100 1.0 10 60 80 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. TIP115, 116, 117 Figure 7. TIP110, 111, 112
There are two limitations on the power handling ability of 200 a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE TC = 25°C limits of the transistor that must be observed for reliable 100 operation; i.e., the transistor must not be subjected to greater 70 dissipation than the curves indicate. The data of Figures 6 and 7 is based on T ANCE (pF) 50 J(pk) = 150°C; T ACIT C C is variable depending on conditions. Second breakdown ob pulse limits are valid for duty cycles to 10% provided T 30 J(pk) Cib < 150°C. T C, CAP J(pk) may be calculated from the data in Figure 5. 20 At high case temperatures, thermal limitations will reduce PNP the power that can be handled to values less than the NPN limitations imposed by second breakdown. 10 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40 VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance www.onsemi.com 5
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) ACTIVE−REGION SAFE−OPERATING AREA
10 10 4.0 4.0 (AMPS) 1ms (AMPS) 2.0 5ms 2.0 TJ = 150°C dc TJ = 150°C dc 1.0 BONDING WIRE LIMITED 1.0 BONDING WIRE LIMITED THERMALLY LIMITED OR CURRENT OR CURRENT THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) @ TC = 25°C (SINGLE PULSE) SECONDARY BREAKDOWN LIMITED SECONDARY BREAKDOWN LIMITED , COLLECT , COLLECT I C TIP115 CURVES APPLY BELOW I C CURVES APPLY BELOW TIP110 TIP116 TIP111 RATED V RATED V CEO CEO TIP117 TIP112 0.1 0.1 1.0 10 40 60 80 100 1.0 10 60 80 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. TIP115, 116, 117 Figure 7. TIP110, 111, 112
There are two limitations on the power handling ability of 200 a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE TC = 25°C limits of the transistor that must be observed for reliable 100 operation; i.e., the transistor must not be subjected to greater 70 dissipation than the curves indicate. The data of Figures 6 and 7 is based on T ANCE (pF) 50 J(pk) = 150°C; T ACIT C C is variable depending on conditions. Second breakdown ob pulse limits are valid for duty cycles to 10% provided T 30 J(pk) Cib < 150°C. T C, CAP J(pk) may be calculated from the data in Figure 5. 20 At high case temperatures, thermal limitations will reduce PNP the power that can be handled to values less than the NPN limitations imposed by second breakdown. 10 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40 VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance www.onsemi.com 5