Datasheet VS-50SQ060, VS-50SQ080, VS-50SQ100 (Vishay)

FabricanteVishay
DescripciónSchottky Rectifier, 5 A
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VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3). Schottky Rectifier, 5 A. FEATURES. DO-204AR. PRODUCT SUMMARY. DESCRIPTION

Datasheet VS-50SQ060, VS-50SQ080, VS-50SQ100 Vishay

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VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3)
www.vishay.com Vishay Semiconductors
Schottky Rectifier, 5 A FEATURES
• 175 °C TJ operation • Low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
DO-204AR
and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified for commercial level
PRODUCT SUMMARY
Package DO-204AR • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 IF(AV) 5 A VR 60 V, 80 V, 100 V
DESCRIPTION
VF at IF 0.52 V The VS-50SQ... axial leaded Schottky rectifier series has I been optimized for low reverse leakage at high temperature. RM max. 7.0 mA at 125 °C The proprietary barrier technology allows for reliable TJ max. 175 °C operation up to 175 °C junction temperature. Typical Diode variation Single die applications are in switching power supplies, converters, E freewheeling diodes, and reverse battery protection. AS 7.5 mJ
MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 5 A VRRM Range 60 to 100 V IFSM tp = 5 μs sine 1900 A VF 5 Apk, TJ = 125 °C 0.52 V TJ Range - 55 to 175 °C
VOLTAGE RATINGS VS-50SQ060 VS-50SQ080 VS-50SQ100 PARAMETER SYMBOL UNITS VS-50SQ060-M3 VS-50SQ080-M3 VS-50SQ100-M3
Maximum DC reverse voltage VR 60 80 100 V Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I See fig. 5 F(AV) 50 % duty cycle at TC = 119 °C, rectangular waveform 5 Maximum peak one cycle A 5 μs sine or 3 μs rect. pulse Following any rated load 1900 non-repetitive surge current IFSM condition and with rated See fig. 7 10 ms sine or 6 ms rect. pulse V 290 RRM applied Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.0 A, L = 15 mH 7.5 mJ Current decaying linearly to zero in 1 μs Repetitive avalanche current IAR 1.0 A Frequency limited by, TJ maximum VA = 1.5 x VR typical Revision: 19-Sep-11
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Document Number: 93355 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000