Datasheet Si3457CDV (Vishay) - 4

Si3457CDV
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 100 0.25 ID = 4.1 A ) 0.20 Ω TJ = 150 °C 0.15 10 TJ = 25 °C TJ = 125 °C - On-Resistance ( 0.10 - Source Current (A) I S DS(on)R 0.05 TJ = 25 °C 1 0.00 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
2.2 25 ID = 250 µA 2.0 20 1.8 15 (W) GS(th)V (V) 1.6 Power 10 1.4 5 1.2 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power
100 Limited by RDS(on)* 10 100 µs 1 1 ms - Drain Current (A) 10 ms I D 0.1 100 ms 1s, 10 s T DC A = 25 °C BVDSS Single Pulse Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified
Safe Operating Area
SO9-0131-Rev. B, 02-Feb-09
4
Document Number: 68602 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000