Datasheet 2N6282 (Inchange Semiconductor) - 2

FabricanteInchange Semiconductor
Descripciónisc Silicon NPN Darlingtion Power Transistor
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isc Silicon NPN Darlingtion Power Transistor. 2N6282. ELECTRICAL CHARACTERISTICS TC=25. unless otherwise specified. SYMBOL

isc Silicon NPN Darlingtion Power Transistor 2N6282 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL

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isc Silicon NPN Darlingtion Power Transistor 2N6282 ELECTRICAL CHARACTERISTICS TC=25

unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCEO(SUS) Col ector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 60 V VCE(sat)-1 Col ector-Emitter Saturation Voltage IC= 10A; IB= 40mA 2.0 V VCE(sat)-2 Col ector-Emitter Saturation Voltage IC= 20A; IB= 200mA 3.0 V VBE(sat) Base-Emitter Saturation voltage IC= 20A; IB= 200mA 4.0 V VBE(on) Base-Emitter On voltage IC= 10A; VCE= 3V 2.8 V ICEO Col ector Cutoff current VCE= 30V; IB=0 1.0 mA IEBO Emitter Cut-off current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain IC= 10A; VCE= 3V 750 18000 hFE-2 DC Current Gain IC= 20A; VCE= 3V 100
NOTICE
: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifical y disclaims any and al liability, including without limitation special, consequential or incidental damages.
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Document Outline isc Silicon NPN Darlingtion Power Transistor DESCRIPTION APPLICATIONS ABSOLUTE MAXIMUM RATINGS(TC=25℃) THERMAL CHARACTERISTICS isc Silicon NPN Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS