Datasheet IRFP140 (Vishay) - 2

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DescripciónPower MOSFET
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IRFP140. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. Notes

IRFP140 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP MAX UNIT SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN Notes

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IRFP140
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 40 Case-to-sink, flat, greased surface RthCS 0.24 - °C/W Maximum junction-to-case (drain) RthJC - 0.83
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID = 19 A b - - 0.077 Ω Forward transconductance gfs VDS = 50 V, ID = 19 A b 9.8 - - S Dynamic Input capacitance Ciss V - 1700 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 550 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 110 - Total gate charge Qg - - 72 I Gate-source charge Qgs V D = 17 A, VDS = 80 V GS = 10 V - - 11 nC see fig. 6 and 13 b Gate-drain charge Qgd - - 32 Turn-on delay time td(on) - 11 - Rise time tr V - 44 - DD = 50 V, ID = 17 A, ns R Turn-off delay time t g = 9.1 Ω, RD = 2.9 Ω, see fig. 10 b d(off) - 53 - Fall time tf - 43 - Internal drain inductance LD Between lead, D - 5.0 - 6 mm (0.25") from package and center of nH Internal source inductance L G S - 13 - die contact S Drain-Source Body Diode Characteristics Continuous source-drain diode current IS MOSFET symbol - - 31 D showing the integral reverse A Pulsed diode forward current a I G SM - - 120 p - n junction diode S Body diode voltage VSD TJ = 25 °C, IS = 31 A, VGS = 0 V b - - 2.5 V Body diode reverse recovery time trr - 180 360 ns TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 1.3 2.8 μC Forward turn-on time ton Intrinsic turn-on time is neglegible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S22-0045-Rev. C, 24-Jan-2022
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Document Number: 91202 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000