Datasheet MAC223FP, MAC223AFP (Motorola)
| Fabricante | Motorola |
| Descripción | Silicon Bidirectional Triode Thyristors |
| Páginas / Página | 4 / 1 — Order this document. SEMICONDUCTOR TECHNICAL DATA. by MAC223FP/D. Silicon … |
| Formato / tamaño de archivo | PDF / 106 Kb |
| Idioma del documento | Inglés |
Order this document. SEMICONDUCTOR TECHNICAL DATA. by MAC223FP/D. Silicon Bidirectional Triode Thyristors. ISOLATED TRIACs
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MOTOROLA
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223FP/D
MAC223FP Series Triacs MAC223AFP
Silicon Bidirectional Triode Thyristors
Series . designed primarily for full-wave ac control applications, such as lighting systems, heater controls, motor controls and power supplies; or wherever full-wave silicon-
ISOLATED TRIACs
gate-controlled devices are needed.
THYRISTORS
• Off-State Voltages to 800 Volts
25 AMPERES RMS
• All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability
200 thru 800 VOLTS
• Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat Dissipation • Gate Triggering Guaranteed in Three Modes (MAC223FP Series) or Four Modes (MAC223AFP Series) MT2 MT1 G
CASE 221C-02 STYLE 3 MAXIMUM RATINGS
(TJ = 25° unless otherwise noted.)
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C, VDRM Volts 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC223-4FP, MAC223A4FP 200 MAC223-6FP, MAC223A6FP 400 MAC223-8FP, MAC223A8FP 600 MAC223-10FP, MAC223A10FP 800 On-State RMS Current (TC = +80°C) Full Cycle Sine Wave 50 to 60 Hz(2) IT(RMS) 25 Amps Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C, ITSM 250 Amps preceded and followed by rated current) Circuit Fusing (t = 8.3 ms) I2t 260 A2s Peak Gate Power (t p 2 µs) PGM 20 Watts Average Gate Power (TC = +80°C, t p 8.3 ms) PG(AV) 0.5 Watt Peak Gate Current (t p 2 µs) IGM 2 Amps Peak Gate Voltage (t p 2 µs) VGM ±10 Volts RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%) V(ISO) 1500 Volts Operating Junction Temperature TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C Mounting Torque — 8 in. lb. 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.2 °C/W Thermal Resistance, Case to Sink RθCS 2.2 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W 1 Motorola Thyristor Device Data Motorola, Inc. 1995
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223FP/D
MAC223FP Series Triacs MAC223AFP
Silicon Bidirectional Triode Thyristors
Series . designed primarily for full-wave ac control applications, such as lighting systems, heater controls, motor controls and power supplies; or wherever full-wave silicon-
ISOLATED TRIACs
gate-controlled devices are needed.
THYRISTORS
• Off-State Voltages to 800 Volts
25 AMPERES RMS
• All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability
200 thru 800 VOLTS
• Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat Dissipation • Gate Triggering Guaranteed in Three Modes (MAC223FP Series) or Four Modes (MAC223AFP Series) MT2 MT1 G
CASE 221C-02 STYLE 3 MAXIMUM RATINGS
(TJ = 25° unless otherwise noted.)
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C, VDRM Volts 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC223-4FP, MAC223A4FP 200 MAC223-6FP, MAC223A6FP 400 MAC223-8FP, MAC223A8FP 600 MAC223-10FP, MAC223A10FP 800 On-State RMS Current (TC = +80°C) Full Cycle Sine Wave 50 to 60 Hz(2) IT(RMS) 25 Amps Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C, ITSM 250 Amps preceded and followed by rated current) Circuit Fusing (t = 8.3 ms) I2t 260 A2s Peak Gate Power (t p 2 µs) PGM 20 Watts Average Gate Power (TC = +80°C, t p 8.3 ms) PG(AV) 0.5 Watt Peak Gate Current (t p 2 µs) IGM 2 Amps Peak Gate Voltage (t p 2 µs) VGM ±10 Volts RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%) V(ISO) 1500 Volts Operating Junction Temperature TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C Mounting Torque — 8 in. lb. 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.2 °C/W Thermal Resistance, Case to Sink RθCS 2.2 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W 1 Motorola Thyristor Device Data Motorola, Inc. 1995