Datasheet MRF8P29300HR6, MRF8P29300HSR6 (NXP) - 10
| Fabricante | NXP |
| Descripción | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| Páginas / Página | 16 / 10 — TYPICAL CHARACTERISTICS — 2. COMPACT TEST FIXTURE. Figure 15. Pulsed … |
| Formato / tamaño de archivo | PDF / 1.1 Mb |
| Idioma del documento | Inglés |
TYPICAL CHARACTERISTICS — 2. COMPACT TEST FIXTURE. Figure 15. Pulsed Output Power versus. Input Power
Línea de modelo para esta hoja de datos
MRF8P29300H
MRF8P29300HS
Versión de texto del documento
TYPICAL CHARACTERISTICS — 2
″
x3
″
COMPACT TEST FIXTURE
59 P3dB = 55.4 dBm (347 W) Ideal 58 57 P2dB = 55 dBm (316 W) 56 (dBm) Actual 55 P1dB = 54.3 dBm (269 W) POWER 54 T 53 UTPU 52 ,O P out 51 VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz 50 Pulse Width = 300 μsec, Duty Cycle = 10% 49 34 35 36 37 38 39 40 41 42 43 44 Pin, INPUT POWER (dBm) PULSED
Figure 15. Pulsed Output Power versus Input Power
15.5 55 VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz 15 Pulse Width = 300 μsec, Duty Cycle = 10% 50 ) G B) 14.5 ps 45 (% (d NCY GAIN 14 40 13.5 35 EFFICIE IN ,POWER ηD DRA G ps 13 30 D,η 12.5 25 12 20 30 100 500 Pout, OUTPUT POWER (WATTS) PULSED
Figure 16. Pulsed Power Gain and Drain Efficiency versus Output Power
15 53 - 5 VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Pulse Width = 300 μsec, Duty Cycle = 10% 14.5 52 ) - 10 Gps (% IRL (dB) B) (d 14 51 NCY SS - 15 LO GAIN RN 13.5 50 EFFICIE - 20 IN RETU T ,POWER 13 49 DRA - 25 , PU G ps D ηD η L,IN 12.5 48 IR - 30 12 47 - 35 2700 2750 2800 2850 2900 f, FREQUENCY (MHz)
Figure 17. Pulsed Power Gain, Drain Efficiency and Input Return Loss versus Frequency MRF8P29300HR6 MRF8P29300HSR6
RF Device Data 10 Freescale Semiconductor
″
x3
″
COMPACT TEST FIXTURE
59 P3dB = 55.4 dBm (347 W) Ideal 58 57 P2dB = 55 dBm (316 W) 56 (dBm) Actual 55 P1dB = 54.3 dBm (269 W) POWER 54 T 53 UTPU 52 ,O P out 51 VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz 50 Pulse Width = 300 μsec, Duty Cycle = 10% 49 34 35 36 37 38 39 40 41 42 43 44 Pin, INPUT POWER (dBm) PULSED
Figure 15. Pulsed Output Power versus Input Power
15.5 55 VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz 15 Pulse Width = 300 μsec, Duty Cycle = 10% 50 ) G B) 14.5 ps 45 (% (d NCY GAIN 14 40 13.5 35 EFFICIE IN ,POWER ηD DRA G ps 13 30 D,η 12.5 25 12 20 30 100 500 Pout, OUTPUT POWER (WATTS) PULSED
Figure 16. Pulsed Power Gain and Drain Efficiency versus Output Power
15 53 - 5 VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Pulse Width = 300 μsec, Duty Cycle = 10% 14.5 52 ) - 10 Gps (% IRL (dB) B) (d 14 51 NCY SS - 15 LO GAIN RN 13.5 50 EFFICIE - 20 IN RETU T ,POWER 13 49 DRA - 25 , PU G ps D ηD η L,IN 12.5 48 IR - 30 12 47 - 35 2700 2750 2800 2850 2900 f, FREQUENCY (MHz)
Figure 17. Pulsed Power Gain, Drain Efficiency and Input Return Loss versus Frequency MRF8P29300HR6 MRF8P29300HSR6
RF Device Data 10 Freescale Semiconductor