VS-26MT.., VS-36MT.. Series www.vishay.com Vishay Semiconductors 55 55 26MT.. Series 50 50 T = 150 °C 1 K/ R J 45 45 thSA W = 0.7 K/ 40 40 2 K/ 35 35 W W - 3 K/ Δ 30 120° (rect.) 30 R W 4 K/ 25 25 W 5 K/ 20 20 W 7 K/ 15 15 W 10 10 10 K/W Maximum Total Power Loss (W) 5 Maximum Total Power Loss (W) 5 0 0 0 5 10 20 25 0 25 50 75 100 125 150 Total Output Current (A)Maximum Allowable Ambient Temperature (°C) Fig. 3 - Total Power Loss Characteristics 320 150 300 At any rated load condition and with rated V applied following surge. 36MT.. Series RRM 280 Initial T = 150 °C J 130 260 at 60 Hz 0.0083 s le(°C) 240 at 50 Hz 0.0100 s wab 220 110 200 m Allo 180 umperature e 90 160 120° (rect.) + Peak Half Sine WaveForward Current (A) 140 MaximCase T ~ 70 120 - 100 26MT.. Series 80 50 1 10 100 0 5 10 15 20 25 30 35 40 Number of Equal Amplitude Half CycleTotal Output Current (A)Current Pulses (N) Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 6 - Current Ratings Characteristics 400 1000 Maximum non-repetitive surge current 360 versus pulse train duration. Initial T = 150 °C 36MT.. Series J 320 No voltage reapplied Rated V reapplied RRM 100 280 240 Per junction 200 10 T = 25 °C Peak Half Sine WaveForward Current (A) 160 J 120 T = 150 °C J 26MT.. Series 80 Instantaneous Forward Current (A) 1 0.01 0.1 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Pulse Drain Duration (s)Instantaneous Forward Voltage (V) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 7 - Forward Voltage Drop Characteristics Revision: 15-Jan-2019 3 Document Number: 93565 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000