Datasheet CM2400HCB-34N (Mitsubishi Electric) - 5
| Fabricante | Mitsubishi Electric |
| Descripción | 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules |
| Páginas / Página | 7 / 5 — MITSUBISHI HVIGBT MODULES. CM2400HCB-34N. HIGH POWER SWITCHING USE. … |
| Formato / tamaño de archivo | PDF / 97 Kb |
| Idioma del documento | Inglés |
MITSUBISHI HVIGBT MODULES. CM2400HCB-34N. HIGH POWER SWITCHING USE. INSULATED TYPE. CAPACITANCE CHARACTERISTICS
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MITSUBISHI HVIGBT MODULES CM2400HCB-34N HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE CAPACITANCE CHARACTERISTICS GATE CHARGE CHARACTERISTICS (TYPICAL) (TYPICAL)
104 20 7 VCE = 900V, IC = 2400A 5 Tj = 25°C 3 15 2 ) 103 ( V Cies 7 10 ) 5 ( nF 3 2 5 102 7 5 0 3 CAPACITANCE 2 Coes -5 101 GATE-EMITTER VOLTAGE 7 5 -10 3 VGE = 0V, Tj = 25°C 2 f = 100kHz Cres 100 -15 100 10-1 2 3 5 7 101 102 2 3 5 7 2 3 5 7 0 10 20 30 40 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (µC)
HALF-BRIDGE SWITCHING ENERGY HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS CHARACTERISTICS (TYPICAL) (TYPICAL)
2.5 6 VCC = 900V, VGE = ±15V VCC = 900V, IC = 2400A RG (on) = 0.8Ω, RG (off) = 1.1Ω VGE = ±15V, Tj = 125°C E T on j = 125°C, Inductive load Inductive load 5 2.0 ) Eon ( J/P ( J/P 4 Eoff 1.5 3 1.0 2 Erec Eoff SWITCHING ENERGIES SWITCHING ENERGIES 0.5 1 Erec 0 0 0 1000 2000 3000 4000 5000 0 2 4 6 8 10 12 COLLECTOR CURRENT (A) GATE RESISTANCE (Ω) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 5
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE CAPACITANCE CHARACTERISTICS GATE CHARGE CHARACTERISTICS (TYPICAL) (TYPICAL)
104 20 7 VCE = 900V, IC = 2400A 5 Tj = 25°C 3 15 2 ) 103 ( V Cies 7 10 ) 5 ( nF 3 2 5 102 7 5 0 3 CAPACITANCE 2 Coes -5 101 GATE-EMITTER VOLTAGE 7 5 -10 3 VGE = 0V, Tj = 25°C 2 f = 100kHz Cres 100 -15 100 10-1 2 3 5 7 101 102 2 3 5 7 2 3 5 7 0 10 20 30 40 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (µC)
HALF-BRIDGE SWITCHING ENERGY HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS CHARACTERISTICS (TYPICAL) (TYPICAL)
2.5 6 VCC = 900V, VGE = ±15V VCC = 900V, IC = 2400A RG (on) = 0.8Ω, RG (off) = 1.1Ω VGE = ±15V, Tj = 125°C E T on j = 125°C, Inductive load Inductive load 5 2.0 ) Eon ( J/P ( J/P 4 Eoff 1.5 3 1.0 2 Erec Eoff SWITCHING ENERGIES SWITCHING ENERGIES 0.5 1 Erec 0 0 0 1000 2000 3000 4000 5000 0 2 4 6 8 10 12 COLLECTOR CURRENT (A) GATE RESISTANCE (Ω) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 5