IXYS Thyristor/Diode Module Types M##501-12io2 to M##501-18io2 Notes on Ratings and Characteristics 1.0 Voltage Grade Table VDRM VRRM V 1200 1400 1600 1800 Voltage Grade 12 14 16 18 VDSM VRSM V 1300 1500 1700 1900 VD VR DC V 900 1050 1200 1350 2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production. 3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tvj below 25°C. 4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V is assumed. This gate drive must be applied when using the full di/dt capability of the device. IGM 4A/µs IG tp1 The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration (tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater. Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a magnitude in the order of 1.5 times IGT. Rating Report. Types M##501-12io2 and M##501-18io2 Issue 2 Page 3 of 10 August, 2011