AOK20B135D11350V, 20A Alpha IGBT TM with DiodeGeneral DescriptionProduct Summary • Latest AlphaIGBT (α IGBT) technology VCE • Best in Class V 1350V CE(SAT) enables high efficiencies • Low turn-off switching loss due to fast turn-off time IC (TC=100°C) 20A • Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25°C) 1.57V • Better thermal management • High surge current capability • Minimal gate spike due to high input capacitance Applications • Induction Cooking • Rice Cookers • Microwave Ovens • Other soft switching applications Top Viei w C TO-2- 47 G E E C AOA K20B135D1 G Orded rablb e Partt NuN mu beb rPackageg TyT py epFoF ro mMinin mumu Orded r Quau ntn it tyt AOK20B135D1 TO247 Tube 240 Absolute Maximum Ratings TA=25°C unless otherwise noted ParameterSymbolAOK20B135D1Units Collector-Emitter Voltage V CE 1350 V Gate-Emitter Voltage ±20 V V GE Transient Voltage (tp 1µs,D 0.025) ≤ < ±30 Continuous Collector TC=25°C 40 I C A Current TC=100°C 20 Pulsed Collector Current, Limited by TJmax I Cpulse 80 A Turn off SOA, VCE 600V, Limited by T ≤ Jmax I LM 80 A Continuous Diode TC=25°C 40 I F A Forward Current TC=100°C 20 Diode Pulsed Current, Limited by TJmax I Fpulse 80 A TC=25°C 340 P D W Power Dissipation TC=100°C 170 Junction and Storage Temperature Range T J , T STG -55 to 175 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds T L 300 °C Thermal Characteristics ParameterSymbolAOK20B135D1Units Maximum Junction-to-Ambient R θ JA 40 °C/W Maximum IGBT Junction-to-Case R θ JC 0.44 °C/W Maximum Diode Junction-to-Case R θ JC 1.20 °C/W Rev.1.0: April 2014 www.aosmd.com Page 1 of 8