AOT5B65M1/AOB5B65M1650V, 5A Alpha IGBT TMWith soft and fast recovery anti-parallel diodeGeneral DescriptionProduct Summary • Latest AlphaIGBT (α IGBT) technology VCE 650V • 650V breakdown voltage IC (TC=100°C) 5A • Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25°C) 1.57V • High efficient turn-on di/dt controllability • Low VCE(SAT) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness Applications • Motor Drives • Home appliance applications such as refrigerators and washing machines • Fan, Pumps, Vacuum Cleaner • Other Hard Switching Applications TO-263 C TO-220D2PAK C E E G C G G E AOT5B65M1AOB5B65M1Orderable Part NumberPackage TypeFormMinimum Order Quantity AOT5B65M1 TO220 Tube 1000 AOB5B65M1 TO263 Tape & Reel 800 Absolute Maximum Ratings TA=25°C unless otherwise noted ParameterSymbolAOT5B65M1/AOB5B65M1Units Collector-Emitter Voltage V CE 650 V Gate-Emitter Voltage V GE ±30 V Continuous Collector TC=25°C 10 I C A Current TC=100°C 5 Pulsed Collector Current, Limited by TJmax I CM 15 A Turn off SOA, VCE 650V, Limited by T ≤ Jmax I LM 15 A Continuous Diode TC=25°C 10 I F A Forward Current TC=100°C 5 Diode Pulsed Current, Limited by TJmax I FM 15 A Short circuit withstanding time 1) t SC 5 µs VGE = 15V, VCC 400V, T 175°C ≤ J ≤ TC=25°C 83 P D W Power Dissipation TC=100°C 42 Junction and Storage Temperature Range T J , T STG -55 to 175 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds T L 300 °C Thermal Characteristics ParameterSymbolAOT5B65M1/AOB5B65M1Units Maximum Junction-to-Ambient R θ JA 65 °C/W Maximum IGBT Junction-to-Case R θ JC 1.8 °C/W Maximum Diode Junction-to-Case R θ JC 4.7 °C/W 1) Allowed number of short circuits: <1000; time between short circuits: >1s. Rev.1.0: April 2015 www.aosmd.com Page 1 of 9